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Content available Infrared Spectroscopy of Light Impurities in GaSb
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EN
In our work we study the doping behaviour of sulphur in Czochralski grown GaSb by means of the high resolution Fourier transform infrared spectroscopy and the secondary ion mass spectroscopy. We have revealed that the sulphur impurity forms an effective mass like donor state bound to the L-minimum of the conduction band. From the far infrared spectrum of this donor we derive the effective band masses of the L band minimum. We also observe local vibrational modes related to the arsenic and phosphorus isoelectronic impurities. From the nearest neighbour isotope splittings of these modes we conclude that the arsenic impurity occupies a tetrahedral substitutional site and the phosphorus impurity - a low symmetry lattice site.
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Content available remote X-Ray Photoelectron Study of Yb-Doped InP
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EN
X-ray photoelectron spectra of core levels are reported for InP:Yb. Crystalline InP, doped with Yb to a level of 0.5 at.%, was grown by the synthesized solute diffusion method. An analysis of the core-level spectra of the constituent components, i.e. In 3d_{5/2} and P 2p, revealed a minor influence of the surface oxide species, mainly in the phosphate-like form. The spectrum of the Yb 4d core level was also recorded. The energy of the Yb 4d_{3/2} peak was found identical to that in Yb metal, whereas the 4d_{5/2} peak was found to be shifted to higher binding energies. This effect was found comparable to the case of advanced oxidation of Yb thus confirming its high reactivity, even as a bulk dopant. The data give also a rare experimental example of detection of bulk dopant atoms in a semiconductor matrix by X-ray photoelectron spectroscopy at the limit of detectability.
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We report on the studies of autoionization efficiency and the relevant recombination mechanism for Eu^{2+} in Ca_{x}Cd_{1-x}F_{2} depending on the energy level position of Eu^{2+} excited states in respect to the conduction band states.
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Content available remote Absorption Studies of the Sulphur Donor in GaSb
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EN
The shallow-deep bistability of the sulphur-related DX centre in GaSb is demonstrated. After photoexcitation of the defect with the near-band gap light the metastable inter-donor transition in the far infrared can be ob­served. This observation allowed us to evaluate the polaron effective mass and polaron coupling constant for the material.
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