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1 Acta Physica Polonica A

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Localization of Excitons in the Wetting Layer Accompanying Self-Assembled InAs/GaAs Quantum Dots

100%

Babinski A. , Raymond S. , Wasilewski Z. , Lapointe J. , Potemski A.

Acta Physica Polonica A

2004

tom 105

nr 6

547-552

A wetting layer is a narrow, highly strained quantum well, which accompanies quantum dots grown in Stranski-Krastanow mode. Its importance for a full description of the quantum dots properties has recently been pointed out. It has been shown for example that excitons can be localized by potential fluctuations in the wetting layer. This is equivalent to the formation of "natural" quantum dots in the WL. Excitonic emission from the single dots formed in the wetting layer accompanying the InAs/GaAs self-assembled quantum dots has been investigated in a high magnetic field (up to 23 T). Quadruplet splitting of the investigated emission line has been observed. The attribution of the emission line to the recombination of negatively charged exciton is discussed.

MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots

72%

Rousset J. , Słupinski T. , Jakubczyk T. , Kobak J. , Stawicki P. , Gołasa K. , Babinski A. , Nawrocki M. , Pacuski W.

nr 6

984-987

We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.