The properties of nanocomposite carbon-nickel-palladium (C-Ni-Pd) films deposited on Al₂O₃ substrate have been investigated and the results are presented in this work. C-Ni-Pd films were obtained by a 3 step process consisting of PVD/CVD/PVD methods. The structure and morphology of the obtained films were characterized by scanning electron microscopy and transmission electron microscopy techniques at various stages of film formation. Energy dispersive X-ray spectrometer was used for measuring the elements segregation in the obtained film. Transmission electron microscopy and scanning transmission electron microscopy observations have shown carbon nanotubes decorated with palladium nanoparticles in the final film. The average size of the palladium nanoparticles did not exceed 10 nm.
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The core-multishell wurtzite structure (In,Ga)As-(Ga,Al)As-(Ga,Mn)As semiconductor nanowires have been successfully grown on GaAs(111)B substrates using MBE technique. The nanowires cores were grown with gold eutectic catalyser in vapour-liquid-solid growth mode. The double shell overgrowth, on the side facets of nanowires, was performed using lower substrate temperature (about 400°C, and 230°C, for (Ga,Al)As, and (Ga,Mn)As shell growth, respectively). The polytypic ordering, defects, chemistry and geometric perfection of the core and the shells have been analysed at atomic level by advanced transmission electron microscope techniques with the use of axial and longitudinal section of individual nanowires prepared by focused ion beam. High quality cross-sections suitable for quantitative transmission electron microscope analysis have been obtained and enabled analysis of interfaces between the core and the shells with near atomic resolution. All investigated shells are epitaxial without misfit dislocations at the interface. Some of the shells thicknesses are not symmetric, which is due to the shadowing effects of neighbouring nanowires and directional character of the elemental fluxes in the MBE growth process.
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In this work we report on the atomic structures, elemental distribution, defects and dislocations of three types of semiconductor nanowires: ZnTe, CdTe, and complex ZnTe/(Cd,Zn)Te core/shell hetero-nanowires grown by a molecular beam epitaxy on (111) Si substrate using a vapor-liquid-solid mechanism. The structural properties and the chemical gradients were measured by transmission electron microscopy methods. The nanowires reveal mainly sphalerite structure, however wurtzite nanowires were also observed.
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