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3 Acta Physica Polonica A

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Optical Properties of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} Epitaxial Layers

100%

Świątek K. , Piskorski M. , Piotrowski T.

Acta Physica Polonica A

1996

tom 90

nr 5

1100-1102

Photoluminescence spectra of Al_{x}Ga_{1-x}As_{y}Sb_{1-y} layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al_{0.20}Ga_{0.80}As_{0.02}Sb_{0.98} band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.

Shallow Ohmic Contact System to n-GaAs

75%

Kamińska E. , Piotrowska A. , Piotrowski T. , Barcz A. , Guziewicz M. , Adamczewska J. , Kwiatkowski S.

Acta Physica Polonica A

1993

tom 84

nr 4

804-806

Low resistance (Au)GeNi ohmic contacts to n-GaAs with smooth morphology and restricted penetration into the substrate have been fabricated. Rapid thermally nitrided tungsten has been demonstrated to be an effective capping layer during the contact processing.

Materials Technology for GaSb-Based optoelectronic Devices

63%

Piotrowska A. , Kamińska E. , Piotrowski T. , Piskorski M. , Guziewicz M. , Papis E. , Gołaszewska-Malec K. , Kasjuniuk S.

Acta Physica Polonica A

1996

tom 90

nr 5

903-906

A study is made of surface preparation, metallization, patterning and dielectric deposition with the aim of developing process technology for GaSb-based photonic devices.