Wyniki wyszukiwania - Biblioteka Nauki

Ten serwis zostanie wyłączony 2025-02-11.

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

4 Acta Physica Polonica A

Znaleziono wyników: 4

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

100%

Kierdaszuk J. , Kaźmierczak P. , Drabińska A. , Wysmołek A. , Korona K. , Kamińska M. , Pakuła K. , Pasternak I. , Krajewska A. , Żytkiewicz Z.

nr 5

1087-1089

In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.

Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

100%

Taube A. , Gierałtowska S. , Gutt T. , Małachowski T. , Pasternak I. , Wojciechowski T. , Rzodkiewicz W. , Sawicki M. , Piotrowska A.

nr 5

696-698

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering

100%

Borysiewicz M. , Pasternak I. , Dynowska E. , Jakieła R. , Kolkovski V. , Dużyńska A. , Kamińska E. , Piotrowska A.

nr 5

686-688

ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.

Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO

80%

Gas K. , Janik E. , Zaleszczyk W. , Pasternak I. , Dynowska E. , Fronc K. , Kolkovsky V. , Kret S. , Morhange J. , Reszka A. , Wiater M. , Caliebe W. , Karczewski G. , Kowalski B. , Szuszkiewicz W. , Wojtowicz T.

nr 5

612-614

We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.