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1
Content available remote On the Tunneling Among Shallow and Deep Centers in ZnS
100%
Zakrzewski A. , Sienkiewicz A.
Acta Physica Polonica A
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1991
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tom 79
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nr 2-3
251-254
EN
Results of the photo-ESR studies of recharging processes due to tunneling in ZnS:Cu crystals are presented. It was found that the tunneling among shallow and deep centers seems to be a second order effect in the overall photoluminescence quenching in ZnS by transition metal impurities.
2
Content available remote On the Symmetry of the Sulfur Pair-Related Defect in Silicon
80%
Bennebroek M. , Zakrzewski A. , Frens A. , Schmidt J.
Acta Physica Polonica A
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1993
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tom 84
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nr 4
725-728
EN
A sulfur-related-pair defect in silicon has been studied with optically detected magnetic resonance spectroscopy. Measurement of the angular dependence of the optically detected magnetic resonance signals supplemented by the analysis of the spectrum "quality" yield to the conclusion that the point group symmetry of the defect studied is C_{1h}.
3
Content available remote Sensitivity of Polarimetric Waveguide Interferometer for Different Wavelengths
80%
Gut K. , Zakrzewski A. , Pustelny T.
Acta Physica Polonica A
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2010
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tom 118
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nr 6
1140-1142
EN
This publication presents experimental measurement methodology which allows to determine the characteristics of sensitivity planar differential interferometer. To confirm data reliability additional measurements were done such as simulations in OptiBPM software by Optiwave. Curves received from two methods: experimental and theoretical, were summed up and compared. Conclusions were made on their basis, for example the influence of used wavelengths or refractive index of single mode waveguide cladding on curves of sensitivity differential interferometer using planar waveguide received from the ion exchange method.
4
Content available remote Self-Induced Persistent Photoconductivity in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} Heterojunctions
70%
Van Khoi L. , Dobrowolski W. , Zakrzewski A. , Dobaczewski L. , Gałązka R.
Acta Physica Polonica A
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1996
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tom 90
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nr 5
883-886
EN
At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V^{m}. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd_{1-x}Mn_{x} Te_{1-y}Se_{y} heterojunctions can be caused by the bistable nature of the In dopant in the Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn_{x}Cd_{1-x}Te and Cd_{1-x}Mn_{x}Te.
5
Content available remote Indium Doping of CdTe Grown by Molecular Beam Epitaxy
51%
Karczewski G. , Zakrzewski A. , Kutrowski M. , Jaroszyński J. , Dobrowolski W. , Grodzicka E. , Janik E. , Wojtowicz T. , Kossut J. , Barcz A.
Acta Physica Polonica A
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1995
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tom 87
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nr 1
241-244
EN
We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10^{14} up to 1.3 × 10^{18} cm^{-3}. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10^{18} cm^{-3}). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
6
Content available remote Lattice Parameter Relaxation during MBE of ZnTe/Cd_{1-x}Zn_{x}Te/Cd_{0.5}Zn_{0.5}Te Buffer Layers by RHLED and HRTEM
51%
Kret S. , Karczewski G. , Zakrzewski A. , Dłużewski P. , Dubon A. , Wojtowicz T. , Kossut J. , Delamarre C. , Laval J. Y.
Acta Physica Polonica A
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1995
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tom 88
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nr 4
795-798
EN
The dynamics of the lattice relaxation processes were investigated us­ing a reflection of a high energy electron diffraction analysis system dur­ing growth by molecular beam epitaxy of ZnTe/Cd_{1-x}Ζn_{x}Te/Cd_{0.5}Mn_{0.5}Te buffers on GaAs substrates. The variation of the lattice parameter recorded by the high energy electron diffraction during the growth was later confirmed by an analysis of high resolution transmission electron microscopy images. We report also on an observation of oscillations of the lattice parameter during the deposition of several first layers of ZnTe on CdTe.
7
Content available remote Spatial Correlations of Donor Charges in MBE CdTe
51%
Suski T. , Wiśniewski P. , Litwin-Staszewska E. , Wasik D. , Przybytek J. , Baj M. , Karczewski G. , Wojtowicz T. , Zakrzewski A. , Kossut J.
Acta Physica Polonica A
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1995
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tom 88
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nr 5
929-932
EN
We present experimental evidence that at high pressures indium donors in CdTe localize electrons in spatially correlated manner. We have studied Hall mobility, μ_{H}, as a function of electron concentration, n_{H}, at T=77 K. Changes of n_{H} have been achieved by two methods. High pressure freeze-out of electrons onto localized states of In-donors leads to the mobility enhancement with respect to the situation when n_{H} has been modified by means of a subsequent annealing of the sample. As a result, depending on the degree of spatial correlations in the impurity charges arrangement, different values of μ_{H} correspond to the same value of n_{H}. The variation of mobility with electron concentration suggests that the localized state of In-donor represents likely negatively charged DX state.
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