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Prospect for research on spintronics of U3As4 ferromagnet and its semiconducting Th derivatives

100%

Wiśniewski P. , Henkie Z.

Materials Science Poland

2007

tom Vol. 25, No. 2

533--539

Low magnetic field magnetisation along easy magnetic axis [111], Hall resistivity and the effect of magnetic field of different directions on U3As4 resistivity along the easy axis as well as along the hard one ([100]) have been examined. The Hall resistivity reaches the highest value ?H = 1.75 uqm at T = 113 K where it yields the giant anomalous Hall coefficient RS = 6.25 uqm T-1 and the tangent of the Hall angle of 0.42. Magnetic field exceeding the demagnetisation field Hdemag < 0.28 T changes the resistivity by up to 36 % at T = 77 K.

Crystallization of (Th1-xUx)3As4 ferromagnetic semiconductor from the Ga flux

80%

Wiśniewski P. , Henkie Z. , Pietraszko A.

Materials Science Poland

2008

tom Vol. 26, No. 4

933--938

Crystals of n- or p-type heavily doped ferromagnetic semiconductor (Th1–xUx)3As4 (x = 0.67 and 0.80) were grown using a mineralization process in the Ga flux. An excess of As corresponding to MeAs2composition was necessary to grow the Me3As4 phase at temperature cycled between 1000 ºC and 1060 ºC. Dilution of U3As4 ferromagnet (Curie temperature TC = 198 K) with 20% of Th3As4 semiconductor (energy gap of 0.39 eV) reduced TC by 19%.