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4 Acta Physica Polonica A

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Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon

100%

Kaczor P. , Kopalko K. , Godlewski M. , Gregorkiewicz T.

Acta Physica Polonica A

1992

tom 82

nr 4

677-680

A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.

Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture

75%

Godlewski M. , Guziewicz E. , Gierałtowska S. , Łuka G. , Krajewski T. , Wachnicki Ł. , Kopalko K.

Acta Physica Polonica A

2009

tom 116

nr S

S-19-S-21

We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator HfO_{2}. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.

Cathodoluminescence Profiling for Checking Uniformity of ZnO and ZnCoO Thin Films

75%

Witkowski B. , Łukasiewicz M. , Wolska E. , Kopalko K. , Kowalski B. , Guziewicz E. , Godlewski M.

nr 5

675-677

We employ scanning electron microscopy and cathodoluminescence for evaluation of uniformity of ZnCoO films obtained by the atomic layer deposition. Cathodoluminescence quenching by Co ions allows us to detect (regions of weaker light emission) Co accumulations, with the resolution limited by diffusion length of secondary carriers.

Structure Dependent Conductivity of Ultrathin ZnO Films

63%

Snigurenko D. , Kopalko K. , Krajewski T. , Łuka G. , Gierałtowska S. , Witkowski B. , Godlewski M. , Dybko K. , Paszkowicz W. , Guziewicz E.

nr 6

1042-1044

Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.

Do We Understand Magnetic Properties of ZnMnO?

51%

Godlewski M. , Wójcik A. , Kopalko K. , Ivanov V. , Wilamowski Z. , Jakieła R. , Guziewicz E. , Szczepanik A. , Dłużewski P. , Chikoidze E. , Barjon J. , Dumont Y. , Putkonen M. , Niinistö L. , Tang D.

nr 2

261-267

Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.