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EN
A design and manufacturing of test structures for characterization of logic integrated circuits in a VeSTIC process developed in ITE, are described. Two variants of the VeSTIC processs have been described. A role and sources of the process variability have been discussed. The VeSFET I-V characteristics, the logic cell static characteristics, and waveforms of the 53-stage ring oscillator are presented. Basic parameters of the VeSFETs have been determined. The role of the process variability and of the parasitic elements introduced by the conservative circuit design, e.g. wide conductive lines connecting the devices in the circuits, have been discussed. Based on the inverter layout and on the process specification, the parasitic elements of the inverter equivalent circuit have been extracted. The inverter propagation times, the ring oscillator frequency, and their dependence on the supply bias have been determined.
EN
In this paper, we present metrology and control methods and techniques for electromagnetically actuated microcantilevers. The electromagnetically actuated cantilevers belong to the micro electro mechanical systems (MEMS), which can be used in high resolution force and mass change investigations. In the described experiments, silicon cantilevers with an integrated Lorentz current loop were investigated. The electromagnetically actuated cantilevers were characterized using a modified optical beam deflection (OBD) system, whose architecture was optimized in order to increase its resolution. The sensitivity of the OBD system was calibrated using a reference cantilever, whose spring constant was determined through thermomechanical noise analysis registered interferometrically. The optimized and calibrated OBD system was used to observe the resonance and bidirectional static deflection of the electromagnetically deflected cantilevers. After theoretical analysis and further experiments, it was possible to obtain setup sensitivity equal to 5.28 mV/nm.
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