The paper describes the status of photovoltaics (PV) in the World. The recent development of PV market and factors influencing its rapid growth are described. The prospects for further growth are analysed. The amount of installed power, production, and current efficiencies invarious technologies are presented. The current status and prospects of bulk and thin-film technologies are described. High efficiency cells and new concepts of solar cells are presented.
Słoneczna energia elektryczna (fotowoltaika) jest w stanie sprostać rosnącemu światowemu zapotrzebowaniu na energię w najbliższych dekadach XXI wieku. Przy obecnych kierunkach rozwoju technologii i rynku, słoneczna fotowoltaika (PV) będzie miała znaczący wpływ na poprawę środowiska naturalnego, zapewnienie bezpieczeństwa energetycznego i uchroni przed kryzysami energetycznym. Są to trzy najistotniejsze powody aby rozważać inwestycje w odnawialne źródła energii w rozpoczynającym się stuleciu. Niniejszy artykuł przedstawia stan obecny i perspektywy rozwoju PV w nadchodzących dekadach XXI wieku.
The paper describes performance of the grid-connected 1-kW PV system installed on a grammar school in Warsaw after two years of operation. The system consists of twenty Millennia MST-50 MV modules and inverter Sunny Boy GCI 1200. The performance of the system is continuously monitored according to guidelines in IEC 61724. Energy production in the first year was about 740 kWh and it was slightly higher than expected with respect to the simulation done before installation. In the second year, the energy production was about 680 kWh. The measured efficiency of the PV modules is about 5%, efficiency of the inverter is about 92% and efficiency of the entire PV system exceeds 4%. The performance ratio is in the range from 0.5 to 0.8.
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We studied relaxation of defects formed during fast quenching in low pressure chemical vapour deposition (LPCVD) amorphous silicon with different hydrogen concentrations (from 0.05 at.% to 15 at.%) doped with boron or phosphorous (2 at.%). Results of measurement of dark conductivity after quenching and slow cooling as well as measurement of the isothermal relaxation of dark conductivity after quenching in different temperatures are presented. We found relaxation time higher in P-doped than in B-doped films in the same annealing temperature. Activation energy of relaxation time was independent on hydrogen concentration and was higher for B-doped samples.