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Energy transformation in Plasma Focus discharge with wire and liner as a load

100%

Kubeš P. , Kravárik J. , Klír D. , Scholz M. , Paduch M. , Tomaszewski K. , Karpinski L. , Ryc L. , Juha L. , Krása J. , Szydlowski A. , Romanova V.

Nukleonika

2002

tom Vol. 47, nr 4

151-153

We present the results of experiments focused on energy transformations during the implosion of the hydrogen current sheath towards an Al wire (120 ěm in diameter) positioned on the top of the inner electrode of the PF-1000 plasma focus facility at the IPPLM in Warsaw. A wire corona is formed at the current sheath impact and ~60 ns after the impact a soft X-ray pulse is emitted. Its spectrum contains AlVI-XII lines accompanied by their satellites. The amount of emitted energy is recorded by two filtered PIN diodes and thermoluminescent dosimeters and depends on symmetry of the current sheath and quality of the current sheath focus. The mean value of energy of keV photons emitted in the runs done without the wire (~1 J) is higher than the energy obtained with the wire (~0.4 J). A time delay between the impact of the current sheath and X-ray pulse, the plasma focus dynamics and soft X-ray emission are interpreted by an axial magnetic field generation and transformations.

Metrology of Mo/Si multilayer mirrors at 13.5 nm with the use of a laser-produced plasma extreme ultraviolet (EUV) source based on a gas puff target

100%

Rakowski R. , Bartnik A. , Fiedorowicz H. , Jarocki R. , Kostecki J. , Krzywinski J. , Mikolajczyk J. , Pina L. , Ryc L. , Szczurek M. , Ticha H. , Wachulak P.

Optica Applicata

2006

tom Vol. 36, nr 4

s. 593--600

In this paper an application of a recently developed laser plasma source of extreme ultraviolet (EUV) for optical measurements of optical characteristics of Mo/Si multilayer mirrors is presented. The source is based on an xenon-helium double-stream gas puff target irradiated with laser pulses from a Nd : YAG laser system (E = 0.55 J, t = 3.9 ns, f = 10 Hz, M 2 = 2.5). The results show that the source can be useful for EUV lithography technologies as a metrology tool in the semiconductor industry.