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High power AlGaAs/GaAs lasers with improved optical degradation level

100%

Bugajski M. , Zbroszczyk M. , Sajewicz P. , Muszalski J.

tom Vol. 32, nr 3

469-475

Accurate numerical simulation of AlGaAs/GaAs SQW SCH lasers and MQW SCH lasers is presented. We discuss the performance of both types of lasers with regard to high power operation at 808 nm spectral band which is of interest for diode pumped Nd:YAG lasers. Design rules for above-mentioned lasers are formulated. From the analysis presented it follows that MQW SCH lasers are better suited for high power applications and exhibit a superior tolerance to inherent construction parameters variations, as well as to external operation parameters. We also test different waveguide designs. The most important conclusion is that broader waveguides are suitable for obtaining higher optical powers and generally result in higher COD (catastrophic optical degradation) level.

Ultrashort pulses supported by SESAM absorber

88%

Jasik A. , Muszalski J. , Gaca J. , Wójcik M. , Pierściński K.

2010

tom Vol. 58, nr 4

477-483

We have developed a mode-locked diode-pumped Yb:KYW laser generating nearly band-width limited pulses as short as 101 fs. At 1.1 W absorbed power and 3% transmission output coupler, the laser delivers 150 mW for pulse duration of 110 fs, what corresponds to an efficiency of 14%. It was achieved using semiconductor saturable absorber mirror (SESAM) grown by molecular beam epitaxy. SESAM contains a distributed Bragg reflector (DBR) completed by single quantum well (SQW) playing role of an absorbing layer. The absorbers were crystallized in accordance with the predicted structure parameters under optimised growth conditions. The resonant-like type of structures ensured relatively high enhancement factor due to antireflective properties of SiO2 capping material and a wavelength independence of a group delay dispersion. The optimisation of the growth conditions of both an absorbing layer and DBR structure were widely carried out. Optical reflectance and high resolution X-ray diffraction have been used for characterization and verification of DBR structures. It results in reduction of the nonsaturable absorption in SESAM and self-starting mode-locking of the ultrashort pulses.

Ultrashort pulses supported by SESAM absorber

88%

Muszalski J. , Jasik A. , Wójcik M. , Gaca J. , Pierściński K.

nr 4

High power QW SCH InGaAs/GaAs lasers for 980-nm band

51%

Bugajski M. , Mroziewicz B. , Regiński K. , Muszalski J. , Kosiel K. , Zbroszczyk M. , Ochalski T. , Piwoński T. , Wawer D. , Szerling A. , Kowalczyk E. , Wrzesińska H. , Górska M.

nr 2

High power QW SCH InGaAs/GaAs lasers for 980-nm band

51%

Bugajski M. , Mroziewicz B. , Regiński K. , Muszalski J. , Kosiel K. , Zbroszczyk M. , Ochalski T. , Piwoński T. , Wawer D. , Szerling A. , Kowalczyk E. , Wrzesińska H. , Górska M.

tom Vol. 53, nr 2

113-122

Strained layer InGaAs/GaAs SCH SQW (Separate Confinement Heterostructure Single Quantum Well) lasers were grown by Molecular Beam Epitaxy (MBE). Highly reliable CW (continuous wave) 980-nm, broad contact, pump lasers were fabricated in stripe geometry using Schottky isolation and ridge waveguide construction. Threshold current densities of the order of Jth = 280 A/cm2 (for the resonator length L = 700 [mu]m) and differential efficiency [eta]= 0.40 W/A (41%) from one mirror were obtained. The record wall-plug efficiency for AR/HR coated devices was equal to 54%. Theoretical estimations of above parameters, obtained by numerical modelling of devices were Jth = 210 A/cm and [eta] = 0.47 W / A from one mirror, respectively. Degradation studies revealed that uncoated and AR/HR coated devices did not show any appreciable degradation after 1500 hrs of CW operation at 35°C heat sink temperature at the constant optical power (50 mW) conditions.