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1
Content available Comparison of single-diode models applied to thin film PV module operating under different environmental conditions
100%
Gulkowski S.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2017
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tom Vol. 21, No 1
43--52
EN
The electrical current-voltage (I-V) characteristic a of photovoltaic (PV) module depends on the environmental conditions under which it operates. The shape of the I-V curve depends on the solar cell technology and changes dynamically in time with irradiance and temperature. A simulation model of the PV module can be used to examine the dynamic behavior of the I-V curve as well as to extract the module parameters from the curves. This paper presents the results of comparison of two different models based on a single-diode equivalent circuit applied to a thin film module. The Matlab/Simulink simulation studies of I-V characteristic curves in the function of irradiance and temperature were carried out. The results were compared with the experimental data of the I-V curves obtained from outdoor measurements. Relative errors of the simulation and experimental results were analyzed.
2
Content available Application of the Savitzky-Golay method for power output data set
100%
Gulkowski S.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
|
2015
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tom Vol. 19, No 1
25--34
EN
The power output of a PV system changes in time during the day and strongly depends on the location and orientation of the photovoltaic module as well as on seasonal conditions. Clouds occurring during a partly cloudy day are the reason why this data is very irregular and difficult to analyze in terms of obtaining energy. The Savitzky-Golay method was applied for the power output data obtained for sunny, cloudy and partly cloudy days in order to determine the average level of power produced by a PV system at a given location. The total amount of energy was analyzed for each case.
3
Content available Computer implementation of mass transport in Matlab environment for modeling Epitaxial growth process with moving boundary problem
100%
Gulkowski S.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2015
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tom Vol. 19, No 1
15--23
EN
Due to the possibility of producing high quality and low cost silicon substrates the Epitaxial Lateral Overgrowth technology may find its application in the photovoltaic industry. However, a lateral growth process depends on many technological parameters such as the temperature of the system, the cooling rate, the solvent or the geometry of the mask. For this reason finding optimized settings for these factors in experimental research is difficult and time consuming. Numerical analysis of the growth process leads to better understanding of the fundamentals of the growth process. For this reason a computational model of epitaxial growth was proposed. This paper focuses on the accuracy of the numerical solution of the mass transport process during epitaxial growth. The method was implemented in the Matlab environment for the moving boundary application. The results of the calculations are presented.
4
Content available remote Modelling of the Interface Evolution During Si Layer Growth on a Partially Masked Substrate
51%
Gulkowski S. , Olchowik J. , Cieślak K. , Moskvin P.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
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tom Vol. 15, No 1
91-98
EN
High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.
5
Content available remote Influence of dielectric coverage on photovoltaic conversion of silicon solar cells obtained by epitaxial lateral overgrowth
51%
Cieslak K. , Gulkowski S. , Olchowik J. M.
Materials Science Poland
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2012
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tom Vol. 30, No. 3
274--277
EN
This work presents an analysis of the influence of SiO2 dielectric coverage of a Si substrate on the solar-cell efficiency of Si thin layers obtained by epitaxial lateral overgrowth (ELO). The layers were obtained by liquid phase epitaxy (LPE). All experiments were carried out under the following conditions: initial temperature of growth: 1193 K; temperature difference ^T = 60 K; ambient gas: Ar; metallic solvent: Sn+Al; cooling rates: 0.5 K/min and 1 K/min. To compare the influence of the interior reflectivity of photons, we used two types of dielectric masks in a shape of a grid etched in SiO2 along the <110> and <112> directions on a p+ boron-doped (111) silicon substrate, where silicon dioxide covered 70 % and 80 % of the silicon surface, respectively. The results obtained in this work depict the correlation between the interior efficiency and percentage of SiO2 coverage of the substrate of the ELO solar cells.
6
Content available remote Finite element method simulation of interface evolution during epitaxial growth
51%
Gulkowski S. , Olchowik J. M. , Cieslak K. , Moskvin P. P.
Materials Science Poland
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2012
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tom Vol. 30, No. 4
414--418
EN
Epitaxial Lateral Overgrowth (ELO) is a method of epitaxial growth on a partially masked substrate. It can be a promising method for photovoltaic applications due to a possibility of producing thin and high quality silicon substrates. Since the mask prevents propagation of the substrate dislocations to the laterally overgrown parts of the ELO layer they are characterized by a lower dislocation density than the substrate. It means that it is possible to fabricate good quality solar cells on a poor quality Si substrate. The main goal of the research is to obtain a higher growth rate in the lateral direction than in the direction normal to the substrate. The epilayer growth kinetics depends on many technological factors, basically the growth temperature, the cooling rate, the solvent and the mask filling factor. For this reason the best way to achieve the goal is a computational analysis of the epitaxial layer growth process. This work presents a two-dimensional computational study of such a process of growth for different technological conditions. The computational model is based on the assumption of pure diffusion control growth.
7
Content available remote New Approach to the Determination of Phase Equilibrium in the Zn-Te System
38%
Moskvin P. , Olchowik J. , Olchowik G. , Zdyb A. , Gulkowski S. , Sadowski W.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
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tom Vol. 15, No 2
209-217
EN
The polyassociative model of the liquid phase was applied to describe the phase equilibrium in the Zn-Te system. The thermodynamic functions describing the formation of liquid associates were obtained, taking into account the experimental data on the p-T-x equilibrium in the system. The model of polyassociative solutions with the parameters obtained in this work satisfactorily describes the p-T-x diagram of the system. The numerical results of the analysis of the phase equilibrium confirmed the possibility of applying the polyassociative model to the Zn-Te system in a wide temperature range.
8
Content available remote Polyassociative Model of A2B6 Semiconductor Melt and p-T-x Phase Equilibria in Zn-Cd-Te System
38%
Moskvin P. , Antonov M. , Olchowik G. , Olchowik J. , Zdyb A. , Gulkowski S. , Sadowski W.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
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tom Vol. 15, No 1
121-130
EN
This work presents a numerical analysis of p-T-x phase equilibrium in the Zn-Cd-Te ternary system in the framework of the polyassociative solution model. On the basis of the experimental data on p-T-x phase equilibrium in the ternary system, thermodynamic functions describing the formation of liquid associates were found. It was shown that the results of the mixing of components in the Zn-Cd-Te ternary melt are related to the occurrence of ZnCdTe and ZnCdTe3 associates. Dissociation parameters of these complexes were calculated and subsequently used in order to efficiently describe p-T-x phase equilibrium of the system in a wide temperature range.
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