Wyniki wyszukiwania - Biblioteka Nauki

Ten serwis zostanie wyłączony 2025-02-11.

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

2 Acta Physica Polonica A

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

A Dual Reflector Antenna for Point-to-Point System Applications

100%

Olszewska M. , Gwarek W.

Acta Physica Polonica A

2011

tom 119

nr 4

558-562

In this paper design and realization of a dual reflector antenna for receiving internet signal in the point-to-point system is presented. Three different configurations of dual reflector antenna have been considered to obtain the antenna operating in 5.2-5.8 GHz band and having small dimensions. The results of computer simulations and measurements are shown. The design was based on electromagnetic simulations using QW-V2D package (an axisymmetrical version of finite-difference time-domain software). In measurements the method with a reference antenna was used. Additional discussion about using the main reflector of smaller diameter and decreasing spillover radiation was performed.

Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors

61%

Sakowicz M. , Łusakowski J. , Karpierz K. , Grynberg M. , Gwarek W. , Knap W. , Boubanga S.

Acta Physica Polonica A

2008

tom 114

nr 5

1337-1342

Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.