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2 Acta Physica Polonica A

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Bound Exciton Luminescence in Phosphorus Doped Cd_{1-x}Mn_{x}Te Crystals

100%

Van Khoi L. , Gałązka R. , Witkowska B. , The Khoi N.

Acta Physica Polonica A

1998

tom 94

nr 3

392-396

Measurement of photoluminescence as a function of temperature and of magnetic field in p-type phosphorus doped Cd_{1-x}Mn_{x}Te is reported. From the conduction band-acceptor level transition, the ionization energy of P-acceptors is obtained to be 54ą1 meV. The photoluminescence spectrum in the band edge region exhibits three maxima connected with the recombination of excitons bound to neutral acceptors (A^{0}, X), excitons bound to neutral donors (D^{0},X), and free excitons (X) at energies E_{(A^{0},X)}=1.606, E_{(D^{0},X)}=1.610, and E_{X}=1.614 eV, respectively. At T=1.4 K a strong increase in PL intensity of (A^{0}, X) line 8-fold as a function of magnetic field is found and shown to originate from the magnetic field-induced lowering of the acceptor binding energy and increase in the hole effective volume.

Exciton Dynamics in ZnTe Based Semimagnetic Semiconductors and CdMnTe Quantum Wells

75%

The Khoi N. , Gaj J. , Karczewski G. , Wojtowicz T. , Kossut J. , Demianiuk M.

Acta Physica Polonica A

1996

tom 90

nr 5

899-902

Inelastic scattering of excitons on LO phonons in ZnTe based bulk semimagnetic semiconductors with low concentration of paramagnetic ions (Mn^{2+}, Fe^{2+} and Cr^{2+}) was studied. A polarization degree of the LO phonon Raman lines was measured as a function of the exciton splitting in a magnetic field, and allowed us to determine the polarization lifetime (polariton flight time). A similar method was used to investigate multiple Mn^{2+} spin-flip scattering in CdMnTe quantum well. The cascade model seems to be not adequate to interpret the dependence of the polarization degree on the order of scattering.