Wyniki wyszukiwania - Biblioteka Nauki

Ten serwis zostanie wyłączony 2025-02-11.

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

2 Acta Physica Polonica A

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Doping of the Wide-Gap Semiconductor Cd_{1-x}Mg_{x}Te During Molecular Beam Epitaxy

100%

Fischer F. , Litz T. , Waag A. , Heinke H. , Scholl S. , Gerschütz J. , Landwehr G.

Acta Physica Polonica A

1995

tom 87

nr 2

487-491

We investigated the n-type doping of the wide-gap II-VI semiconductor (CdMg)Te. The n-type doping of (CdMg)Te has previously been achieved in only a small range of magnesium concentration. By the use of zinc iodine as dopant source material, we obtained highly doped (CdMg)Te layers up to a magnesium concentration of 40%. The limiting factor for the free carrier concentration at room temperature is the occurrence of a deep level, which dominates the electrical properties at room temperature of layers with more than 30% magnesium. Compensating defects or defect complexes are considered, to explain the observed properties of the deep level, which do not seem to be characteristic of an isolated donor state.

Exciton States in Type-II ZnSe/BeTe Quantum Wells

84%

Platonov A. V. , Yakovlev D. R. , Zehnder U. , Kochereshko V. P. , Ossau W. , Fischer F. , Litz T. , Waag A. , Landwehr G.

Acta Physica Polonica A

1997

tom 92

nr 5

953-957

We present an optical investigation of novel heterostructures based on beryllium chalcogenides with a type-I and type-II band alignment. In the type-II quantum well structures (ZnSe/BeTe) we observed a strong exciton transition involving an electron confined in the conduction band well and a hole localized in the valence band barrier (both in ZnSe layer). This transition is drastically broadened by the temperature increase due to enhanced exciton-acoustic phonon interaction.