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1 Acta Physica Polonica A

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Photoluminescence Dynamics of GaN/Si Nanowires

100%

Korona K. , Zytkiewicz Z. , Perkowska P. , Borysiuk J. , Binder J. , Sobanska M. , Klosek K.

nr 6

1001-1003

In this work we present analysis of carriers dynamics in samples of GaN nanowires grown on silicon. The samples exhibit bright luminescence of bulk donor-bound excitons at 3.472 eV, surface defect-bound excitons at 3.450 eV (SDX) and a broad (0.05 eV) band centered at 3.47 eV caused probably by single free exciton and bi-exciton recombination. The SDX emission has long lifetime τ = 0.6 ns at 4 K and can be observed up to 50 K. At higher temperatures luminescence is dominated by free excitons. The broad excitonic band is best visible under high excitation, and reveals fast, non-exponential dynamics. We present mathematical model assuming exciton-exciton interaction leading to the Auger processes. The model includes n^2 (Langevin) term and describes well the non-exponential dynamics of the excitonic band.

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

84%

Zytkiewicz Z. , Dluzewski P. , Borysiuk J. , Sobanska M. , Klosek K. , Witkowski B. , Setkiewicz M. , Pustelny T.

Acta Physica Polonica A

2011

tom 120

nr 6A

A-15-A-16

We report on growth of GaN nanocolumns by plasma assisted MBE on (111) silicon substrates and on their characterization. The nanocolumns nucleate on the substrate spontaneously without use of any catalyst, probably by the Volmer-Weber mechanism. Transmission electron microscopy analysis shows high crystalline quality of GaN nanocolumns and their good alignment with the c-axis being perpendicular to the substrate. Preliminary results on use of GaN nanocolumns in gas sensor devices are presented.