Polyethylene foilwas coated by deposition of thin films (30–150 nm) of silicon compounds obtained from tetramethoxysilane (TMOS) in argon plasma under pressure 0.5 or 1 bar in dielectric barrier discharge (DBD). Samples of untreated foil and of the foil coated with thin films deposited under various process conditions were examined by means of FTIR, atomic force microscope (AFM), and bymeasuring the barrier properties. It has been found that under the DBD conditions both the activation process (the action of argon plasma) and the thin coatings consistingmainly of SiO2, reduce the permeation of oxygen and water vapour through the foil. The rate of the coating deposition under investigationwas roughly 65 nm/min.
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