Wyniki wyszukiwania - Biblioteka Nauki

1

Profiling integrated manipulation in automated production and assembly

100%

Valenčik Š. , Kováč J.

|

tom nr 4

36-41

EN

The contribution focuses on profiling techniques of material flow set to the compilation of chains of manipulation and automated production assembly. The solution bases on an analysis of production-logistics relationships. Base using formal methods and tools, and computer graphics modeling material flow. The result is the generation of solutions and simulates the profile handling in the manufacturing / assembly system in the program OptiMan.

2

Reliability analysis of forest machines due to FMEA method

80%

Ťavoda P. , Kováč J. , Łukaszczyk Z. Ł.

|

tom nr 4 (26)

200--206

EN

The article deals with the research of operational reliability of forest felling machines with the method FMEA (Failure Mode and Effect Analysis) and its implementation for observed machines in the organization. Forwarders 810D by John Deere were chosen for this research. The research was realized in real operational conditions. Application of the FMEA method allows flexibility in case of unexpected situations and optimization of human potential abilities. FMEA tool is a tool preventing outages operational reliability and preventive tool for ensuring the maintenance of facilities. This paper explores and verifies the operational reliability theory in practical real-world conditions, resulting in a reduction in operating (variable) costs, minimization of failures and readiness and increased performance of observed machines.

3

Mechatronic aspects of wired in-pipe passive smart bristle micromachine design

70%

Dovica M. , Gorzás M. , Katuch P. , Kováč J. , Ondočko S.

|

tom Vol. 45, nr 8-9

167-169

EN

In this paper we describe design and modelling of the wired in-pipe micromachine which is able to self motion in pipe with inner diameter 35 mm. Micromachine is used tor inspection of inner surface defects Motion principle is based on transformation of the rotary to the linear motion by the worm gearing and the crank mechanism. The mathematical and graphical model of passive smart bristle and experiments of simulation we have analysed. Control system design respects of the continuous movement requirements in case of loading conditions.

PL

W artykule opisano konstrukcję oraz modelowanie instalowanej wewnątrz rury mikromaszyny, która potrafi sama poruszać się w rurach o wewnętrznej średnicy 35 mm. Mikromaszyna wykorzystywana jest do wykrywania i badania uszkodzeń wewnętrznej powierzchni rury. Zasada poruszania się bazuje na zamianie ruchu obrotowego na liniowy za pomocą przekładni ślimakowej oraz mechanizmu korbowego. Przeanalizowano matematyczny i graficzny model biernej inteligentnej wypustki oraz rezultaty badań symulacyjnych. Struktura systemu sterowania uwzględnia wymagania ruchu ciągłego w przypadku występowania obciążenia.

4

Planarne domieszkowanie krzemem naprężonych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE

51%

Ściana B. , Radziewicz D. , Paszkiewicz B. , Tłaczała M. , Sitarek P. , Kudrawiec R. , Misiewicz J. , Kováč J. , Florovič M.

|

tom Vol. 46, nr 2-3

14-15

PL

Przedstawiono wyniki badań, dotyczące procesów planarnego domieszkowania krzemem naprężonych, pojedynczych studni kwantowych InxGa1-xAs/GaAs w technice MOVPE. Badano wpływ parametrów procesu domieszkowania oraz szerokości studni kwantowej na rozkład domieszki krzemowej. Wprowadzenie domieszki typu delta do studni kwantowej w znaczący sposób zwiększa jej przestrzenne ograniczenie. Ponadto powoduje silną modyfikację przejść optycznych i wzmocniony efekt Starka.

EN

This work presents the studies of Si-δ-doped InxGa1-x As/GaAs strained quantum well obtained by MOVPE technology. The influence of the growth parameters and quantum well width on silicon dopant distribution was investigated. It was shown that introducing delta layer into quantum well gives better carrier confinement. In addition, the PR and PC spectra of Si-δ-doped InxGa1-x As/GaAs SQW confirmed significant modification of the optical transitions and enhanced QCSE.

5

AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell

41%

Dawidowski W. , Ściana B. , Zborowska-Lindert I. , Mikolásek M. , Latkowska M. , Radziewicz D. , Pucicki D. , Bielak K. , Badura M. , Kováč J. , Tłaczała M.

|

tom Vol. 60, No. 2

151-156

EN

Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.