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Content available remote Modelling of the Interface Evolution During Si Layer Growth on a Partially Masked Substrate
100%
Gulkowski S. , Olchowik J. , Cieślak K. , Moskvin P.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
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tom Vol. 15, No 1
91-98
EN
High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.
2
Content available remote New Approach to the Determination of Phase Equilibrium in the Zn-Te System
75%
Moskvin P. , Olchowik J. , Olchowik G. , Zdyb A. , Gulkowski S. , Sadowski W.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
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tom Vol. 15, No 2
209-217
EN
The polyassociative model of the liquid phase was applied to describe the phase equilibrium in the Zn-Te system. The thermodynamic functions describing the formation of liquid associates were obtained, taking into account the experimental data on the p-T-x equilibrium in the system. The model of polyassociative solutions with the parameters obtained in this work satisfactorily describes the p-T-x diagram of the system. The numerical results of the analysis of the phase equilibrium confirmed the possibility of applying the polyassociative model to the Zn-Te system in a wide temperature range.
3
Content available remote Polyassociative Model of A2B6 Semiconductor Melt and p-T-x Phase Equilibria in Zn-Cd-Te System
75%
Moskvin P. , Antonov M. , Olchowik G. , Olchowik J. , Zdyb A. , Gulkowski S. , Sadowski W.
TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk
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2011
|
tom Vol. 15, No 1
121-130
EN
This work presents a numerical analysis of p-T-x phase equilibrium in the Zn-Cd-Te ternary system in the framework of the polyassociative solution model. On the basis of the experimental data on p-T-x phase equilibrium in the ternary system, thermodynamic functions describing the formation of liquid associates were found. It was shown that the results of the mixing of components in the Zn-Cd-Te ternary melt are related to the occurrence of ZnCdTe and ZnCdTe3 associates. Dissociation parameters of these complexes were calculated and subsequently used in order to efficiently describe p-T-x phase equilibrium of the system in a wide temperature range.
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