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1
Content available remote The Influence of Ion Implantation on the Optical Parameters - Refraction and Extinction Coefficients οf the Oxygen-Enriched Layers Covering GaAs Implanted with Indium Ions
100%
Rzodkiewicz W. , Kulik M. , Pyszniak K. , Kobzev A.
Acta Physica Polonica A
|
2009
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tom 116
|
nr S
S-129-S-132
EN
The semi-isolating GaAs (100) samples irradiated with fluence 3 × 10^{15} ions/cm^{2} of In^{+} ions were characterized by using the methods: Rutherford backscattering spectroscopy, nuclear reaction analysis and ellipsometric spectroscopy. The values of the thicknesses layers enriched with oxygen and the implanted were determined by the methods of nuclear reaction analysis and Rutherford backscattering spectroscopy. Multilayer models were applied for determination of the optical constants (refraction and extinctions coefficients) of investigated samples. The thickness of native oxide covering the surface of implanted GaAs and refraction coefficients were increased after implantation with indium. The spectrum of extinction indexes as a function of light wavelength has two bands near the light wavelengths 400 nm and 480 nm. The observed effects can be interpreted as formation of local oxides of In and InAs precipitates or ternary alloys in enriched with oxygen layers at the surfaces of implanted GaAs.
2
Content available remote Optical Analyses of Si and GaAs Semiconductors by Fractional-Derivative-Spectrum Methods
100%
Rzodkiewicz W. , Kulik M. , Papis E. , Szerling A.
Acta Physica Polonica A
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2009
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tom 116
|
nr S
S-95-S-98
EN
Optical spectra analysis provides a wealth of information on physical properties of various semiconductor materials. Fractional derivative spectrum technique is especially interesting when the limitations of the standard treatment occur. In this paper we present the fractional derivative spectrum method for analysis of the optical spectra for both Si and GaAs. The significant changes in critical point parameters in each treated Si and GaAs samples in comparison to that before treatment have been observed. Our investigation illustrates that fractional derivative spectrum is a very good technique to extract basic information on relevant physical quantities from the observed optical spectra, and it has the advantages of flexibility, directness, and sensitivity, which give possibility to obtain the Van Hove singularities (critical point parameters) efficiently with one consent.
3
Content available remote Effect of Thermal Annealing on Optical Properties of Implanted Gaas
100%
Kulik M. , Komarov F. , Mączka D.
Acta Physica Polonica A
|
1999
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tom 96
|
nr 1
131-135
EN
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10^{16} cm^{-2} indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
4
Content available remote Dielectric Function of Native Oxide on Ion-Implanted GaAs
100%
Kulik M. , Rzodkiewicz W. , Gluba Ł. , Kobzev A.
Acta Physica Polonica A
|
2013
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tom 123
|
nr 5
956-959
EN
The main aim of the reported investigations is the influence of ion implantation on formation of native oxide layers and their optical spectra. Silicon implanted (100)-oriented GaAs crystalline wafers were used as substrates. The samples have been implanted with Ne^{+}, Al^{+}, Ar^{+}, or In^{+} ions at energies of 100, 120, 150, and 250 keV, respectively. The implantations were carried out at a fluence of 1 × 10^{16} cm^{-2} at 300 K. The refraction index spectral dependence for native oxide was approximated using the Cauchy equations. The dielectric function spectra of the native oxide layers on GaAs implanted with different ions have been obtained by variable angle spectroscopic ellipsometer in the 250-900 nm range using complementary information from the Rutherford backscattering/nuclear reactions measurements. The investigations showed that both real and imaginary parts of the dielectric function increase with mass of the ion species used for implantation.
5
Content available remote Nuclear and Optical Analyses of MOS Devices
100%
Rzodkiewicz W. , Kulik M. , Panas A. , Kobzev A.
Acta Physica Polonica A
|
2013
|
tom 123
|
nr 5
851-853
EN
The characteristic dome-like shape distribution of electric parameters (with the biggest values in the middle and the lowest values in the corners of the gate) has been observed in our investigations. Taking the results of the papers into account, the following hypothesis was drawn: the shape distribution of electrical parameters has been caused by the irregular shape of stress distribution under the metal gate. To prove or deny the assumed hypothesis, a lot of investigations on stress and strain in MOS structures are being performed. The study of the atomic composition of electronic components constitutes the starting point of their characterization. Therefore, in this paper, we present experimental results of hydrogen, oxygen, aluminum, silicon, and copper concentrations in MOS structures carried out by the Rutherford backscattering spectrometry and elastic recoil detection methods. These techniques allow inter alia determination of silicon and oxygen content as a function of the position x on a wafer. On the basis of depth profile elastic recoil detection measurements performed on Al and AlSiCu gates, a much larger hydrogen content in the surface layer for MOS structure with Al gate was confirmed. Copper atoms were detected only in the AlSiCu gate.
6
Content available remote Effect of N₂⁺ Ion Implantation and Thermal Annealing on Near-Surface Layers of Implanted GaAs
88%
Kulik M. , Surowiec Z. , Rzodkiewicz W. , Filiks J. , Drozdziel A.
Acta Physica Polonica A
|
2015
|
tom 128
|
nr 5
918-922
EN
The surface of semi-isolating GaAs (100) was irradiated with a fluence of 6×10¹⁷ cm¯² of the N₂⁺ ion beam; then, the samples were thermally annealed at temperatures of 500, 700, and 900°C for 2 h in an argon gas flow. The surface roughness of implanted samples was investigated with the help of atomic force microscopy. Numerous hillocks, which caused a significant increase in surface roughness, were observed. The spectroscopic ellipsometry method was used for determination of pseudo-dielectric functions of the near-surface layers in the investigated samples and the thickness of native oxides covering the irradiated surface. It was observed that the shapes of disorder spectra of the dielectric functions of near-surface layers of implanted GaAs partly returned to their original state after the thermal annealing.
7
Content available remote Chemical Composition of Native Oxide Layers on In^{+} Implanted and Thermally Annealed GaAs
88%
Kulik M. , Kołodyńska D. , Żuk J. , Komarov F. , Filiks J.
Acta Physica Polonica A
|
2013
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tom 123
|
nr 5
943-947
EN
Semi-insulating GaAs wafers have been implanted with 250 keV In^{+} ions at a fluence of 3 × 10^{16} cm^{-2}. The samples prepared in this way were subsequently annealed at a temperature of 600°C or 800°C for 2 h. Thicknesses of the native oxide layers on implanted GaAs after samples storage in air were evaluated using the Rutherford backscattering spectrometry with the nuclear reaction O^{16}(α,α)O^{16} method. The chemical composition of native oxide layers on In^{+} implanted and annealed GaAs has been studied using X-ray photoelectron spectroscopy. As_{2}O_{3}, As_{2}O_{5}, Ga_{2}O_{3}, GaAs, InAs and InAsO_4 compounds were detected in these layers.
8
Content available remote Composition and Structure of Czochralski Silicon Implanted with H_{2}^{+} and Annealed under Enhanced Hydrostatic Pressure
75%
Kulik M. , Kobzev A. , Misiuk A. , Wierzchowski W. , Wieteska K. , Bak-Misiuk J.
|
|
tom 117
|
nr 2
332-335
EN
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as H^{+}) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with H_{2}^{+}; fluence D = 1.7 × 10^{17} cm^{-2}, energy E = 50 keV (projected range of H_{2}^{+}, R_{p}(H) = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
9
Content available remote Influence of Ion Implantation on Magnetic Structural and Optical Properties of (Ga,Mn)As Epitaxial Films
63%
Yastrubchak O. , Kulik M. , Żuk J. , Domagała J. , Szymczak R. , Wosiński T. , Sadowski J. , Tóth A.
|
|
nr 5
1445-1450
EN
We performed implantation experiments, applying both the chemically active oxygen ions and inactive ions of neon noble gas, to thin epitaxial films of (Ga,Mn)As ferromagnetic semiconductor. Inspection of their magnetic properties by means of a superconducting quantum interference device magnetometer revealed that the implantation with a low dose of either O or Ne ions completely suppressed ferromagnetism in the films. Both the high resolution X-ray diffraction technique and the Raman spectroscopy showed significant changes in the structural and optical properties of the films caused by oxygen implantation and confirmed the preservation of high structural and optical quality of the neon implanted (Ga,Mn)As films.
10
Content available remote Slow Positron Beam Studies of the Stainless Steel Surface Exposed to Sandblasting
51%
Horodek P. , Dryzek J. , Kobets A. , Kulik M. , Lokhmatov V. , Meshkov I. , Orlov O. , Pavlov V. , Rudakov A. , Sidorin A. , Siemek K.
Acta Physica Polonica A
|
2014
|
tom 125
|
nr 3
714-717
EN
The paper presents slow positron beam studies of the stainless steel grade 304 AISI samples annealed in the flow N_2 atmosphere and sandblasted under different pressure from 1 to 7 bar. Heating of specimens caused formation of an additional layer on the surface which can be identified as oxides. Sandblasting reduces the thickness of the oxide layer and also defects concentration (vacancies as we suppose) decreases in dependence on pressure applied during blasting. Additionally, the atomic concentrations of oxygen have been obtained using nuclear methods (Rutherford backscattering and nuclear reactions) in the near surface layers of the studied samples.
11
Content available remote Ion Beam Synthesis of InAs Nanocrystals in Si: Influence of Thin Surface Oxide Layers
51%
Komarov F. , Vlasukova L. , Milchanin O. , Greben M. , Komarov A. , Mudryi A. , Wesch W. , Wendler E. , Zuk J. , Kulik M. , Ismailova G.
Acta Physica Polonica A
|
2013
|
tom 123
|
nr 5
809-812
EN
Nanosized crystallites have been synthesized in the Si and SiO_2/Si structures by means of As (170 keV, 3.2 × 10^{16} cm^{-2}) and In (250 keV, 2.8 × 10^{16} cm^{-2}) implantation at 25C and 500C and subsequent annealing at 1050C for 3 min. The Rutherford backscattering, transmission electron microscopy, and photoluminescence techniques were used to analyse the impurity distribution as well as the structural and optical characteristics of the implanted layers. It was found that oxidation of samples before thermal treatment significantly reduced the As and In losses. A broad band in the region of 1.2-1.5 μm was detected in the photoluminescence spectra. The highest photoluminescence yield for the samples after "hot" implantation and annealing was obtained. Anodic oxidation of the implanted samples before annealing results in the additional increase of photoluminescence yield.
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