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EN
Magnetic contribution to the specific heat, magnetic susceptibility and Hall effect are experimentally studied in Pb_{1-x-y}Sn_{y}Mn_{x}Te semimagnetic semiconductors with y=0.72 and x=0.08 and with different carrier concentrations 10^{20} ≤ p ≤ 10^{21} cm^{-3}. The ferromagnetism observed in crystals with p ≥ 3×10^{20} cm^{-3} breaks down with a decreasing concentration of carriers due to an increasing competition between Ruderman-Kittel-Kasuya-Yoshida and superexchange interactions.
2
Content available remote Transport and Magnetic Properties of Pb_{1-x-y}Sn_{y}Mn_{x}Te (x ≤ 0.16)
86%
EN
Hall constant, conductivity and magnetic susceptibility of Pb_{1-x-y}Sn_{y}Mn_{x}Te semimagnetic semiconductor were investigated as a func­tion of Mn content (x = 0.04, 0.09, 0.16, y = (0.7-0.8)) in the temperature range T = (4 - 300) K. A ferromagnetic phase transition takes place at T = 5 K for samples with x = 0.04, at T = 10 K for x = 0.09 and at T = 20 K for x = 0.16. For crystals with x ≥ 0.09 the strong temper­ature dependence of the Hall constant is observed for temperatures below 40 K. Magnetic field characteristics of the Hall effect is strongly non-linear at T = 4.2 K. No significant temperature or magnetic field dependence of con­ductivity is observed in the whole temperature range studied. The observed transport anomalies are due to the anomalous Hall effect.
3
Content available remote Transport and Magnetic Study of Gd Ions in Pb_{1-y}Sn_{y}Te
72%
EN
Electric conductivity, Hall effect and magnetic susceptibility of Pb_{1-x-y} Sn_{y}Gd_{x}Te mixed crystals with 0.13 ≤ y ≤ 0.93 and 0.001 ≤ x ≤ 0.04 were experimentally studied over the temperature range 4K ≤ T ≤ 300 K. The incorporation of Gd ions into the Pb_{1-y}Sn_{y}Te matrix results in semi-metallic n-type conductivity of the crystals with y < 0.6. For crystals with y > 0.6 one observes only semi-metallic p-type conductivity. We present a model explaining these results in terms of the Sn composition dependence of the location of Gd^{2+/3+} level with respect to the band edges of PbSnGdTe.
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