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3 Acta Physica Polonica A

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Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy

100%

Dobaczewski L. , Kamiński P. , Kozłowski R. , Surma M.

Acta Physica Polonica A

1995

tom 88

nr 4

703-706

High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.

Characterization of Radiation Defect Centers in Neutron Irradiated Si Using Inverse Laplace Transformation to Analysis of Photocurrent Relaxation Waveforms

100%

Kamiński P. , Kozłowski R. , Żelazko J.

Acta Physica Polonica A

2014

tom 125

nr 4

976-981

High-resolution photoinduced transient spectroscopy has been applied to investigating the effect of the 1 MeV neutron fluence on the electronic properties of radiation defects in Czochralski grown silicon in magnetic field. A new approach to the analysis of the photocurrent relaxation waveforms as a function of time and temperature has been presented. It is based on using a two-dimensional numerical procedure with implementation of the inverse Laplace transformation for creating images of the sharp spectral fringes depicting the temperature dependences of the thermal emission rate for detected defect centers. In the material irradiated with the fluence of 3×10^{14} cm^{-2}, the dominant traps with activation energies of 75 meV and 545 meV are tentatively identified with an aggregate of three Si interstitials and the trivacancy, respectively. In the material irradiated with the fluence by the order of magnitude higher, the activation energies of the main traps are found to be 115, 350, 505, 545, and 590 meV. These traps are tentatively attributed to an aggregate of four Si interstitials, as well as to vacancy related centers such as V_3 (2-/-), V_2O (-/0), V_3 (-/0) and V_4 (-/0), respectively.

Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC

100%

Suproniuk M. , Kamiński P. , Kozłowski R. , Pawłowski M.

Acta Physica Polonica A

2014

tom 125

nr 4

1042-1048

A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the Z_{1/2} center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.