In this paper results of investigations of the X-ray diffraction and the electrical resistance of the metallic glass Fe_{2}8Co_{50}Si_{9}B_{13} are presented. These investigations were performed for isothermally annealed samples during 4 hours in the temperature range from 573 to 823 K. As a result of annealing, the samples were obtained in a crystalline state. The second series of the investigations was performed for samples annealed at a constant temperature of 673 K but in different time intervals.
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The effect of structural relaxation on the electronic structure of Fe_{78}Si_{9}B_{13} metallic glass was investigated by means of the Hall effect, electrical conductivity and EELS methods. The effect of the structural relaxations was observed by four-hour annealing of the samples in argon atmosphere at temperatures 573, 673, 723, 773 K. The most distinct changes in the measured quantities were observed for samples annealed at 773 K. The differences in EELS spectrum, a decrease in the electrical and the Hall resistance are specific to these samples. X-ray diffractometry confirmed that the samples annealed at this temperature show recrystallization.
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Structural changes accompanying the isothermal annealing of the metallic glass Fe_{18}_{C}o_{60}Si_{9}B_{13} were investigated by X-ray diffraction, positron annihilation as well as by electrical resistivity and the Hall resistivity measurements. It has been found out that at the temperature of 673 K the complete crystallization did not occur, but only a few nuclei of the α-Fe phase, which did not grow, were formed.
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