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Four years of EZ-IO® system in the preand in-hospital emergency setting

100%

Reinhardt L. , Brenner T. , Bernhard M. , Knapp J. , Sikinger M. , Martin E. , Helm M. , Popp E.

Open Medicine

2013

tom 8

nr 2

166-171

Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

100%

Fiedler J. , Heera V. , Voelskow M. , Mücklich A. , Reuther H. , Skorupa W. , Gobsch G. , Helm M.

Acta Physica Polonica A

2013

tom 123

nr 5

916-919

Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO_2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO_2/Si and SiO_2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.

Influence of Flash Lamp Annealing on the Optical Properties of CIGS Layer

80%

Prucnal S. , Jiao F. , Reichel D. , Zhao K. , Cornelius S. , Turek M. , Pyszniak K. , Drozdziel A. , Skorupa W. , Helm M. , Zhou S.

Acta Physica Polonica A

2014

tom 125

nr 6

1404-1408

Copper indium gallium diselenide (CIGS) becomes more significant for solar cell applications as an alternative to silicon. The quality of the layer has a critical impact on the final efficiency of the solar cell. An influence of the post-deposition millisecond range flash lamp annealing on the optical and microstructural properties of the CIGS films was investigated. Based on the Raman and photoluminescence spectroscopy, it is shown that flash lamp annealing reduces the defect concentration and leads to an increase of the photoluminescence intensity by a factor of six compared to the nonannealed sample. Moreover, after flash lamp annealing the degradation of the photoluminescence is significantly suppressed and the absolute absorption in the wavelength range of 200-1200 nm increases by 25%.