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1 International Journal of Electronics and Telecommunications

1 2021

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Double-gate MOSFET Model Implemented in Verilog-AMS Language for the Transient Simulation and the Configuration of Ultra Low-power Analog Circuits

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Smaani B. , Meraihi Y. , Nafa F. , Benlatreche M. S. , Akroum H. , Latreche S.

International Journal of Electronics and Telecommunications

2021

tom Vol. 67, No. 4

609--614

This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software.