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4 Acta Physica Polonica A

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Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence

100%

Buczko R. , Langer J.

Acta Physica Polonica A

1993

tom 84

nr 3

591-594

By performing state-of-art computations of the acceptor wave functions in GaAs we show that the linewidth of the conduction band to acceptor luminescence increases more than quadratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.

Photostriction of CdF_{2}:In Crystals

80%

Suchocki A. , Raułuszkiewicz J. , Langer J. , Koziarska-Glinka B.

Acta Physica Polonica A

1997

tom 92

nr 5

1005-1008

Lattice relaxation accompanying phototransformation of In bistable centers from the ground, deep state to the shallow state in CdF_{2} crystal has been measured with the use of scanning tunnelling microscope. It is shown that relatively small macroscopic changes of the crystal length in the order of 1.8×10^{-6} accompany the phototransformation of In ions. Lattice expansion upon the influence of population of shallow donor levels in CdF_{2} explains the observed small changes of lattice constant during the process.

Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions

80%

Dobaczewski L. , Langer J. , Missous M.

Acta Physica Polonica A

1993

tom 84

nr 4

741-744

The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.

Implantation of Rare-Earth Atoms into Si and III-V Compounds

80%

Kozanecki A. , Langer J. , Peaker A.

Acta Physica Polonica A

1993

tom 83

nr 1

59-70

Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.