The experimental results on time dependent changes of radiation-induced darkening effects in vitreous chalcogenide semiconductors of ternary stoichiometric (As2S3)y(GeS2)t-y and non-stoichiometric (As2S3)x(Ge2S3)t-x systems with variations of the average coordination number Z are discussed. We established that an adequate model for the quantitative description of these effects can be developed on the basis of bimolecular relaxation function appropriate for annihilation of specific structural defects in the form of oppositely charged atoms with anomal coordinations. The observed features of the investigated dynamic radiation-optical changes in these glasses are explained by their compositional dependences on atomic compactness, as well as covalent bond statistics.
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The peculiarities of non-exponential degradation kinetics in topological-disordered solids are analyzed. It was shown that degradation transformations, described by ideal exponential function, are determined by one value of activation energy independently to the structural dispersivity of the system, while the non-exponential degradation kinetics corresponds to stretched or suppressed exponential-power-like relaxation function. The stretched degradation kinetics is proper to own degradation transformations in one-type systems. The degradation transformations, including two or more different elementary processes, are described by suppressed kinetics.
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