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Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications

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Henkel K. , Seime B. , Paloumpa I. , Müller K. , Schmeisser D.

tom Vol. 28, No. 1

117--128

In the paper, we report on ways to optimize metal-ferroelectric-insulator-semiconductor (MFIS) stacks in terms of the thickness combination of the ferroelectric and the buffering insulator layers in order to reduce the operation voltage of MFIS based non-volatile memory elements. The stack contains poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as a ferroelectric layer. We discuss the optimization of the deposition of this material in order to produce thin films with high polarization. This must be accompanied by an adapted buffer layer, where reduction of thickness as well as increase of permittivity can be taken into account. We show the results based on capacitance voltage measurements (CV) on MFIS stacks, where SiO2 and Al2O3of different thicknesses have been used. Furthermore, we perform simulations of the CV characteristics and we are able to quantify the polarization and decline it from the CV curves. We observe for a 120 nm P(VDF-TrFE)/11 nm Al2O3 stack in a š20V CV loop almost saturated polarization values as predicted by the simulations in that way.

Characterization of oxidic and organic materials with synchrotron radiation based XPS and XAS

86%

Schmeisser D. , Tallarida M. , Henkel K. , Müller K. , Mandal D. , Chumakov D. , Zschech E.

tom Vol. 27, No. 1

141--157

The use of synchrotron radiation (SR) based X-ray absorption spectroscopy (XAS) and X-ray induced photoelectron spectroscopy (XPS) is demonstrated for the analysis of thin films. In the first part we report on oxidic films used for high-k dielectric films in Si technology and focus on a recent in-situ approach to study the atomic layer deposition growth of HfO2 films. We demonstrate that even hidden layers can be characterized by using fluorescence technologies. In the second part, we demonstrate the suitability of SR based techniques for the analysis of organic thin films. Here, the first example deals with P(VDF-TrFE), a ferroelectric polymer, with possible applications in non-volatile memory devices. Another example concerns the analysis of C60 based low-k polymers for use in Cu interconnect systems.