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THz Double-Grating Gate Transistor Detectors in High Magnetic Fields

100%

But D. , Dyakonova N. , Coquillat D. , Teppe F. , Knap W. , Watanabe T. , Tanimoto Y. , Boubanga Tombet S. , Otsuji T.

nr 6

1080-1082

Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.

Terahertz Response of a Point Contact Based on CdTe/CdMgTe Quantum Well in Magnetic Field

80%

Grigelionis I. , Białek M. , Grynberg M. , Czapkiewicz M. , Kolkovskiy V. , Wiater M. , Wojciechowski T. , Wróbel J. , Wojtowicz T. , But D. , Knap W. , Łusakowski J.

nr 6

1069-1072

A photoresponse at THz frequencies of a quantum point contact fabricated on a CdTe/CdMgTe quantum well was studied at low temperatures as a function of magnetic field. The spectra show a structure which was interpreted as resulting from the cyclotron resonance and magnetoplasmon excitations. The wavelength of the fundamental magnetoplasmon mode was found to be about 2 μm which coincides with one of dimensions of the point contact. We also discuss the possibility of coupling of magnetoplasmon modes to shallow impurity transitions in the quantum well.