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3 Acta Physica Polonica A

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Near IR Refractive Index for GaInN Heavily Doped with Silicon

100%

Cywiński G. , Kudrawiec R. , Rzodkiewicz W. , Kryśko M. , Litwin-Staszewska E. , Misiewicz J. , Skierbiszewski C.

Acta Physica Polonica A

2009

tom 116

nr 5

936-938

The authors report on growth and results of infrared measurements of GaInN heavily doped with silicon. The lattice matched to GaN epitaxial layer of Ga_{0.998}In_{0.002}N:Si has been grown in plasma assisted molecular beam epitaxy in the metal rich conditions. The room temperature Hall concentration and mobility of electrons are 2× 10^{20} cm^{-3} and 67 cm^{2}/(Vs), respectively. The refractive index has been determined by variable angle spectroscopic ellipsometry. The refractive index exhibited a significant reduction of its value (from 2.25 to 2 at 1.55 μm) at near IR range where are the main interests of potential applications for nitride based intersubband devices. Reported here values of refractive indices at 1.55 and 1.3 μm are appropriate for fabrication of cladding layers with the required contrast to GaN for intersubband devices. The observed drop of refractive index is attributed to the carrier-induced plasma edge effect, which has been directly observed in reflectance spectrum.

III-V Semiconducting Nitrides Energy Gap under Pressure

84%

Perlin P. , Gorczyca I. , Teisseyre H. , Suski T. , Litwin-Staszewska E. , Porowski S. , Grzegory I. , Christensen N.

Acta Physica Polonica A

1992

tom 82

nr 4

674-676

In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.

High Resistivity GaN Single Crystalline Substrates

67%

Porowski S. , Boćkowski M. , Łucznik B. , Grzegory I. , Wróblewski M. , Teisseyre H. , Leszczyński M. , Litwin-Staszewska E. , Suski T. , Trautman P. , Pakuła K. , Baranowski J.

nr 5

958-962

High resistivity 10^{4}-10^{6} Ω cm (300 K) GaN single crystals were obtained by solution growth under high N_{2} pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.