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2 Opto-Electronics Review

2 2008

2 Eliseev P. G.

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Anti-Stokes luminescence in heavily doped semiconductors as a mechanism of laser cooling

100%

Eliseev P. G.

tom Vol. 16, No. 3

199-207

The anti-Stokes luminescence is a mechanism of the optical refrigeration in semiconductor light sources. The heavily doped semiconductors are considered as a material for the laser cooling. The limitation of this mechanism appears to be connected with a transition from the non-degenerate to degenerate occupation. This transition occurs at higher pumping rate (along with the transition to the optical gain and lasing) and at lower temperature. Thus, the limit for the laser cooling can be indicated. The minimal obtainable temperature is about 60–120 K depending on the doping level. The laser cooling of a semiconductor is impeded by the difficulty of extracting the spontaneous emission from a radiating body that is characterized by large angle of the total internal reflection.

Theory of nonlinear Sagnac effect

100%

Eliseev P. G.

tom Vol. 16, No. 2

118-123

A nonlinear wave interaction is considered as a technique to increase the rotation sensitivity of the ring laser. The gyroscopic scale factor K is calculated in an active laser gyro with a dispersive medium. K is in reverse proportion to the group index n* = n + vdn/dv of the medium. In a monolithically-integrated GaAs ring laser, the value K ~ 5000 is obtainable (radius ~ 1 cm) in a linear case. In the presence of a strong wave, the dynamic nonlinear anomalous dispersion can provide an increase of K by 10-100 times in the vicinity of critical points where n* passes zero. An expression of K is derived for the nonlinear Sagnac effect. The nonlinear dispersion is discussed in terms of "slow/fast" light.