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2 Acta Physica Polonica A

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ZnO by ALD - Advantages of the Material Grown at Low Temperature

100%

Guziewicz E. , Godlewski M. , Krajewski T. , Wachnicki Ł. , Łuka G. , Paszkowicz W. , Domagała J. , Przeździecka E. , Łusakowska E. , Witkowski B.

Acta Physica Polonica A

2009

tom 116

nr 5

814-817

The 3D-architecture is a prospective way in miniaturization of electronic devices. However, this approach can be realized only if metal paths are placed not only at the top, but also beneath the electronic parts, which imposes drastic temperature limitations for the electronic device processing. Therefore last years a lot of investigations are focused on materials which can be grown at low temperature with electrical parameters appropriate for electronic applications. Zinc oxide grown by the atomic layer deposition method is one of the materials of choice. We obtained ZnO-ALD films at growth temperature range between 100°C and 200°C, and with controllable electrical parameters. Free carrier concentration was found to scale with deposition temperature, so it is possible to grow ZnO films with desired conductivity without any intentional doping. We used correlation of electrical and optical parameters to optimize the deposition process. Zinc oxide layers obtained in that way have free carrier concentration as low as 10^{16} cm^{-3} and high mobility (10-50 cm^{2}/(Vs)), which satisfies requirements for a material used in three-dimensional memories.

Structure Dependent Conductivity of Ultrathin ZnO Films

100%

Snigurenko D. , Kopalko K. , Krajewski T. , Łuka G. , Gierałtowska S. , Witkowski B. , Godlewski M. , Dybko K. , Paszkowicz W. , Guziewicz E.

nr 6

1042-1044

Zinc oxide films dedicated for hybrid organic/inorganic devices have been studied. The films were grown at low temperature (100°C, 130C and 200°C) required for deposition on thermally unstable organic substrates. ZnO layers were obtained in atomic layer deposition processes with very short purging times in order to shift a structure of the films from polycrystalline towards amorphous one. The correlation between atomic layer deposition growth parameters, a structural quality and electrical properties of ZnO films was determined.

Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration

80%

Grzanka S. , Łuka G. , Krajewski T. , Guziewicz E. , Jachymek R. , Purgal W. , Wiśniewska R. , Sarzyńska A. , Bering-Staniszewska A. , Godlewski M. , Perlin P.

nr 5

672-674

Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10^{17} cm^{-3}. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10^{20} cm^{-3}. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10^{-3} Ω cm^2. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.