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EN
Photovoltaic effect of the ZnTe-Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} heterojunctions, prepared by vapor-transport epitaxy of ZnTe on Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate was studied. The photovoltaic measurements were carried out over the temperature range from 12 K to 300 K and in the magnetic field up to 6 T. In the magnetic field, maximum of the sensitivity corresponding to the energy of the forbidden gap of Cd_{1-x}Mn_{x}Te_{1-y}Se_{y} substrate splits into two components for σ^{+} and σ¯ circular polarizations of incident light. This phenomenon was ascribed to the exchange interaction of the magnetic moments of Mn^{++} ions with band electrons. From the value of the splitting energy the exchange integral N_{0}(α-β) was determined to be 1.15 ± 0.2 eV.
EN
Reflectivity and Faraday rotation measurements were carried out on Cd_{1-x}Mn_{x}Te bulk crystals in the complete zinc-blende range of composition 0 < x ≤ 0.71. From a comparison of the results of these two experiments for samples with x ≤ 0.3, we demonstrate that the Faraday angle Θ, measured in limited spectral range, is proportional to the energy splitting of exciton states ΔE, measured at the same temperature (2 K) and magnetic field B (up to 5 T). The determined proportionality constant was used to calculate ΔE values also for x > 0.3. This allowed us to find an empirical description of ΔE values for the whole range of compositions as a function of B and x.
3
Content available remote s,p-d Exchange Constants of ZnFeTe Diluted Magnetic Semiconductor
61%
EN
Reflectance and degree of polarization of reflectance of the free exciton in Zn_{1-x}Fe_{x}Te (x ≈ 0.002) was measured at T = 1.9 K and magnetic field up to 5 T. Combining the exciton splitting with the magnetization data we estimated the exchange constant N_{0}(α-β) = 2.1 eV.
EN
The temperature dependence of the energy gap of MBE grown Cd_{1-x}Mn_{x}Te (0.6 < x ≤ 1.0) was measured for 2 K ≤ T ≤ 200 K and B ≤ 5 T. The results are interpreted in the frames of the model predicting that the exchange contribution to the band edge shift is proportional to the product of the magnetic susceptibility and the temperature.
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