Wyniki wyszukiwania - Biblioteka Nauki

1

Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture

100%

Godlewski M. , Guziewicz E. , Gierałtowska S. , Łuka G. , Krajewski T. , Wachnicki Ł. , Kopalko K.

Acta Physica Polonica A

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2009

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tom 116

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nr S

S-19-S-21

EN

We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator HfO_{2}. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.

2

Characterization of ZnO Films Grown at Low Temperature

84%

Przeździecka E. , Krajewski T. , Wójcik-Głodowska A. , Yatsunenko S. , Łusakowska E. , Paszkowicz W. , Guziewicz E. , Wachnicki Ł. , Szczepanik A. , Godlewski M.

Acta Physica Polonica A

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2008

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tom 114

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nr 5

1303-1310

EN

ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.

3

Hybrid Organic/ZnO p-n Junctions, with n-Type ZnO, Grown by Atomic Layer Deposition

84%

Łuka G. , Krajewski T. , Szczerbakow A. , Łusakowska E. , Kopalko K. , Guziewicz E. , Wachnicki Ł. , Szczepanik A. , Godlewski M. , Fidelus J.

Acta Physica Polonica A

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2008

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tom 114

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nr 5

1229-1234

EN

We report on fabrication of hybrid inorganic-on-organic thin film structures with polycrystalline zinc oxide films grown by atomic layer deposition technique. ZnO films were deposited on two kinds of thin organic films, i.e. pentacene and poly(dimethylosiloxane) elastomer with a carbon nanotube content (PDMS:CNT). Surface morphology as well as electrical measurements of the films and devices were analyzed. The current density versus voltage (I-V) characteristics of ITO/pentacene/ZnO/Au structure show a low-voltage switching phenomenon typical of organic memory elements. The I-V studies of ITO/PDMS:CNT/ZnO/Au structure indicate some charging effects in the system under applied voltages.

4

ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution

67%

Łukasiewicz M. , Witkowski B. , Godlewski M. , Guziewicz E. , Sawicki M. , Paszkowicz W. , Łusakowska E. , Jakieła R. , Krajewski T. , Kowalik I. , Kowalski B.

Acta Physica Polonica A

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2009

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tom 116

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nr 5

921-923

EN

We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.

5

Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor

67%

Kowalik I. , Guziewicz E. , Kopalko K. , Yatsunenko S. , Godlewski M. , Wójcik A. , Osinniy V. , Krajewski T. , Story T. , Łusakowska E. , Paszkowicz W.

Acta Physica Polonica A

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2007

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tom 112

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nr 2

401-406

EN

ZnO thin films were grown on silicon substrate by atomic layer deposition method. We explored double-exchange chemical reaction and used very volatile and reactive diethylzinc as a zinc precursor. These enables us to obtain zinc oxide thin films of high quality at extremely low growth temperature (90-200ºC). The films are polycrystalline as was determined by X-ray diffraction and show flat surfaces with roughness of 1-4 nm as derived from atomic force microscopy measurements. Photoluminescence studies show that an edge emission of excitonic origin is observed even at room temperature for all investigated ZnO layers deposited with the diethylzinc precursor.

6

ZnCoO Films Obtained at Low Temperature by Atomic Layer Deposition Using Organic Zinc and Cobalt Precursors

67%

Łukasiewicz M. , Wójcik-Głodowska A. , Guziewicz E. , Jakieła R. , Krajewski T. , Łusakowska E. , Paszkowicz W. , Minikayev R. , Kiecana M. , Sawicki M. , Godlewski M. , Wachnicki Ł. , Szczepanik A.

Acta Physica Polonica A

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2008

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tom 114

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nr 5

1235-1240

EN

In this paper we report on ZnCoO thin films grown by atomic layer deposition method in reactor F-120 Satellite. ZnCoO films were grown at low temperature (T_s=160°C) with a new zinc precursor (dimethylzinc - DMZn) and with cobalt (II) acetyloacetonate (Co(acac)₂) as a cobalt precursor and deionized water as an oxygen precursor. In this paper we concentrate on the methods of homogenizing Co distribution in ZnCoO films.