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1
Content available remote Hopping Conductivity in (Zn,Fe)Se Intentionally Doped with Ag
100%
EN
The transport phenomena in (Zn,Fe)Se were studied. In order to obtain iron centers in Fe^{3+} charge state the crystals were doped by Ag what produces acceptors compensating Fe^{2+} donors. The results are explained in terms of thermally activated jumping of charges between Fe^{3+} and Fe^{2+} centers. The nature of activation energy is discussed. The polaron model seems to be not valid in our case. The Coulomb interaction between charged acceptors and "holes" on iron centers is considered as the origin of thermal activation of jumps. We suggest the deviation from random and mutually independent distributions of charged Ag acceptors and Fe^{3+} ions resulting from the electrostatic interactions between them at high temperatures.
2
80%
EN
Photoconductivity and optical quenching of the photoconductivity were measured. The photoneutralization of the Fe^{3+} centres has been found to occur for photon energies down to 0.8 eV (i.e. the threshold can not be at 1.1 eV, as often quoted). The conclusion from our previous paper that the lattice relaxation energy is small, has been confirmed. It has to be smaller than 0.1 eV.
3
Content available remote Magnetic Anisotropy of V^{++} in CdS
80%
EN
The magnetization measurements at magnetic field up to 6 T obtained from newly grown hexagonal Cd_{1-x}V_{x}S (x ≈ 0.0004) are presented. The strong anisotropy of magnetization is observed at low temperatures (1.6 < T < 20 K). The data are well described by the crystal field model calculations taking into account static trigonal Jahn-Teller distortion and spin-orbit coupling.
4
Content available remote Exchange Interaction in ZnCrSe Semimagnetic Semiconductor
70%
EN
Magnetoreflectance and magnetization of ZnCrSe were measured for B ≤ 5 T and T = 2 K. A linear dependence between exciton splitting and magnetization was found. The s, p-d exchange parameter was estimated: N_{0}α-N_{0}β=0.67eV.
5
Content available remote Exchange Parameters of CdCrS Semimagnetic Semiconductor
70%
EN
Free exciton magnetoreflectance and magnetization of Cd_{1-x}Cr_{x}S (0.0024 < x < 0.0031) were measured at T = 2.0 K and magnetic field up to 5 T. Combining the heavy hole exciton splitting with the magnetization data the exchange integral N_{0}β = +0.46±0.04 eV was evaluated within the framework of mean field approximation.
6
Content available remote Specific Heat of Cr-Based Semimagnetic Semiconductors
70%
EN
Specific heat of ZnCrSe and ZnCrS was measured for 1.5 < T < 10 K and B < 3 T. The data were interpreted using "crystal field model" taking into account tetrahedral crystal field, tetragonal Jahn-Teller distortion and spin-orbit interaction.
7
Content available remote High-Field EPR of Zn_{1-x}Cr_{x}Te
70%
EN
High magnetic field electron paramagnetic resonance experiments have been performed on Zn_{1-x}Cr_{x}Te covering the energy range 1-7 cm^{-1} in fields up to 20 T at T = 1.2 K. The static magnetic field was oriented along the (100), (110) and (111) crystallographic axes of the sample. Pronounced absorption lines for intra-chromium transitions have been observed for these different orientations, revealing a strong anisotropy due to a static Jahn-Teller distortion. The measured low energy level structure of the Cr^{++} ion can be described by a cubic crystal field model including this distortion of the Cr centers.
8
Content available remote Faraday Rotation and Photoionization of ZnCrSe Semimagnetic Semiconductor
61%
EN
The magnetoabsorption and the Faraday rotation of ZnCrSe were measured for B ≤ 5 T and T = 2 K in the region of photon energies lower than the fundamental absorption edge. The circular dichroism of the photoionization absorption bane was observed and analyzed. The Faraday rotation was interpreted as due to the sum of contributions from interband and photoionization optical transitions.
9
Content available remote s,p-d Exchange Constants of ZnFeTe Diluted Magnetic Semiconductor
61%
EN
Reflectance and degree of polarization of reflectance of the free exciton in Zn_{1-x}Fe_{x}Te (x ≈ 0.002) was measured at T = 1.9 K and magnetic field up to 5 T. Combining the exciton splitting with the magnetization data we estimated the exchange constant N_{0}(α-β) = 2.1 eV.
10
61%
EN
Inelastic scattering of excitons on LO phonons in ZnTe based bulk semimagnetic semiconductors with low concentration of paramagnetic ions (Mn^{2+}, Fe^{2+} and Cr^{2+}) was studied. A polarization degree of the LO phonon Raman lines was measured as a function of the exciton splitting in a magnetic field, and allowed us to determine the polarization lifetime (polariton flight time). A similar method was used to investigate multiple Mn^{2+} spin-flip scattering in CdMnTe quantum well. The cascade model seems to be not adequate to interpret the dependence of the polarization degree on the order of scattering.
EN
Magnetoreflectance of free exciton and magnetization in Zn_{1-x}Mn_{x}Se (0.0007 < x < 0.12) were measured. The evaluated proportionality factor between the exciton splitting and the magnetization showed a strong concentration dependence. This effect cannot be explained within the mean field approximation and the virtual crystal approximation and it was described within the model including chemical and magnetic disorder.
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