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3 Acta Physica Polonica A

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Substrate Defects Filtration During Epitaxial Lateral Overgrowth of GaAs

100%

Żytkiewicz Z. R. , Dobosz D.

nr 5

1079-1082

Results on the growth of GaAs on (001) GaAs substrates by the epitaxial lateral overgrowth technique are reported. We show that the ratio of normal to lateral growth rates in the epitaxial lateral overgrowth process can be controlled by the crystallographic orientation of the seeds and by Si adding to the melt. Experimental data showing that the dislocations threading from the substrate are efficiently filtered and cannot propagate to the epitaxial lateral overgrowth layers are presented. These findings prove that the epitaxial lateral overgrowth process is the powerful method to grow epilayers with low dislocation density on high dislocation density substrates.

Alloy Splitting of the Te-DX States in Al_{x}Ga_{1-x}As

70%

Ostermayer G. , Jantsch W. , Dobosz D. , Żytkiewicz Z. , Wilamowski Z.

nr 4

769-772

We report investigations of the Hall effect and conductivity of Te doped Al_{x}Ga_{1-x}As (x = 0.3). After illumination at low temperature, the conductivity decreases in two steps on warming. These steps are explained in terms of the two sets of energy levels associated with two types of Te-DX centers depending on the neighboring host cation (Ga or Al) which undergoes the 1attice relaxation. The observed persistent increase in mobility is also explained in terms of the two different capture barriers.

Anisotropic Lattice Misfit Relaxation in AlGaAs Semi-Bulk Layers Grown on GaAs Substrates by Liquid Phase Electroepitaxy

70%

Żytkiewicz Z. R. , Domagała J. , Bąk-Misiuk J. , Dobosz D. , Leszczyński M.

nr 5

1092-1096

Experimental evidence for unidirectional microcracking in semi-bulk AlGaAs layers grown on (001) GaAs substrates is presented. The asymmetrical microcracking leads to anisotropic lattice misfit relaxation in the AlGaAs/GaAs structure and is explained in terms of higher mobility of [-110]-oriented α-type dislocations than that of β-type dislocations oriented in [110] direction.