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GSK-3β-mediated regulation of cadmiuminduced cell death and survival

100%

Kim S. , Cheon H. , Kim S. M. , Kim Y. Y.

Cellular and Molecular Biology Letters

2018

tom 23

Background: Previous studies indicated that cadmium (Cd) increases PI3-kinase/Akt phosphorylation, resulting in an alteration in GSK-3β activity. However, the mechanism of Cd-induced endoplasmic reticulum (ER) stress in neuronal cells has yet to be studied in needs further elucidation. We examined the role of GSK-3β in Cd-induced neuronal cell death and the related downstream signaling pathways. Methods: SH-SY5Y human neuroblastoma cells were treated with 10 or 20 μM BAPTA-AM and 1 μM wortmannin for 30 min and then incubated with 25 μM Cd for 12 h. Apoptotic cells were visualized via DAPI and PI staining. Data were evaluated with one-way analysis of variance (ANOVA) followed by Student’s t-test. Data are expressed as the means ± SD of experiments performed at least three times. Results: Treatment of human neuronal SH-SY5Y cells with Cd induced ER, stress as evidenced by the increased expression of GRP78, which is a marker of ER stress. Cd exposure significantly increased the phosphorylation of Akt at thr308 and ser473 and that of GSK-3β at ser9 in a time-dependent manner, while the total protein levels of GSK-3β and Akt did not change. Cd-induced apoptosis was higher in GSK-3β-knockdown cells than in normal cells. Conclusions: Our data suggest that Akt/GSK-3β signaling activated by Cd is involved in neuronal cell surviva

Convolutions of generalized white noise functionals

100%

Ji U. C. , Kim Y. Y. , Park Y. J.

Probability and Mathematical Statistics

2013

tom Vol. 33, Fasc. 2

435--450

We study a general definition of convolution products of test white noise functionals, of which the consistency property is examined. As an application of the consistency property of the convolution product we study an extension of the convolution to generalized white noise functionals. We also study relations between the convolution and generalized Fourier-Gauss and generalized Fourier-Mehler transforms.

A study of the gas specificity of porous silicon sensors for organic vapours

75%

Choi S. H. , Cheng H. , Park S. H. , Kim H. J. , Kim Y. Y. , Lee K. W.

Materials Science Poland

2009

tom Vol. 27, No. 2

603--610

A porous silicon sensor was investigated as a means to determine the response specificity for organic vapours. Porous silicon layers were fabricated by electrochemical anodization of p-type crystalline silicon in an HF ethanol solution under various conditions. The porous silicon sensors were placed in a gas chamber with various organic vapours, and the changes in electrical resistance under constant voltage of each sensor were used as detection signals. The sensors recorded various changes in resistivity for various organic vapours.

Surface magnetic anisotropy of Co Hf thin films

75%

Lim W. Y. , Baek J. S. , Kim Y. Y. , Lee S. J. , Yu S. C. , Lee S. H.

Electron Technology

1998

tom Vol. 31, No. 1

60-64

In order to investigate the effect of Hf content and the thickness of Co₁₀₀₋xHfx (x=16,24, 32 at.%) films we observed the absorption lines of spin wave resonance through the ferromagnetic resonance (FMR) measurement. One volume spin wave mode and surface spin wave models were observed for all the samples because the surface anisotropy constants of both sides of the films areless than zero. When the annealing temperature for Co84Hf16 film increased up to 225°C the surface magnetic anisotropy constant Ks2 of the film-substrate interface decreased from -0,07 erg/cm² to -0.32 erg/cm² and the Ks1 constant Ks2 of the film-air interface varied from 0.18 erg/cm² to -47 erg/cm². In Co76Hf24 film Ks2 decreased a little from -0.31 erg/cm² to -0.41 erg/cm² and Ks1 decreased rapidly from -0.19 erg/cm² to-0.60 erg/cm². In genearal it is shown that the surface anisotropy at the film-air interface is very sensitive to Hf content and annealing temperature. This result is due to the increase of Co content caused by oxidation of Hf atoms near the film-air interface during low temperature annealing (150~175°C) and the diffusion of Co atoms during high temperature annealing (200~220°C).