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4 Acta Physica Polonica A

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Optical and Electrical Studies of FR1 and FR2 Defects in GaAs

100%

Dwiliński R. , Palczewska M. , Kaczor P. , Korona K. , Wysmołek A. , Bożek R. , Kamińska M.

Acta Physica Polonica A

1992

tom 82

nr 4

613-616

The systematic EPR, optical absorption, photoluminescence and thermally stimulated current studies of acceptor defects in bulk GaAs were performed. For the first time, parallel EPR and optical absorption experiments allowed to find the absorption spectrum due to the photoionization of FR1 defect with the threshold at 0.19 eV. Photoluminescence studies showed two families of bands in the energy range of about 1.25 to 1.35 eV. We tentatively ascribed them to FR1 and FR2 complexes with shallow donors. Thermally stimulated current measurements showed two peaks at 90 K and 110 K assigned to FR1 and FR2 respectively.

Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP

100%

Jasiński J. , Palczewska M. , Korona K. , Kamińska M. , Bourret E. , Elliot G.

Acta Physica Polonica A

1992

tom 82

nr 5

829-832

Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P_{Ga} introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P_{Ga} and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10^{16} cm^{-2}.

Electrical and Optical Properties of Highly Non-stoichiometric GaAs

100%

Kurpiewski A. , Korona K. , Kamińska M. , Palczewska M. , Jagadish C. , Williams J.

Acta Physica Polonica A

1995

tom 87

nr 2

518-522

The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.

Optical and Electrical Studies of Graphene Deposited on GaN Nanowires

84%

Kierdaszuk J. , Kaźmierczak P. , Drabińska A. , Wysmołek A. , Korona K. , Kamińska M. , Pakuła K. , Pasternak I. , Krajewska A. , Żytkiewicz Z.

Acta Physica Polonica A

2014

tom 126

nr 5

1087-1089

In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.