In this paper using scanning electron microscope, contactless microwave electronic transport and the Raman spectroscopy we studied the properties of graphene deposited on GaN nanowires and compared it with the graphene deposited on GaN epilayer. The Raman micro-mapping showed that nanowires locally change the strain and the concentration of carriers in graphene. Additionally we observed that nanowires increase the intensity of the Raman spectra by more than one order of magnitude.
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The crucial measurements aspects of X-ray photoelectron spectroscopy, such as chemical state analysis, depth profiling, mapping, and thickness calculation have been presented. The metal alloys, Ti_2O_5, graphene and type-II InAs/GaSb superlattice structures have been examined by using the new Thermo Scientific K-Alpha X-ray Photoelectron Spectrometer.
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