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4 Acta Physica Polonica A

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δ-Doped CdTe/Cd_{1-x}Mn_{x}Te Multiple Quantum Wells Investigated by Photoreflectance Spectroscopy

100%

Sitarek P. , Misiewicz J. , Karczewski G. , Wojtowicz T. , Kossut J.

Acta Physica Polonica A

1995

tom 88

nr 5

901-904

Room temperature photoreflectance spectroscopy was used to investigate CdTe/Cd_{1-x}Mn_{x}Te multiple quantum wells grown by MBE. Structures were indium δ-doped into the well or into the barrier. The value of heavy and light hole subbands splitting was measured and compared to the calculated ones. The influence of the position of δ-doping on the measured spectra was shown.

Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures

100%

Sitarek P. , Ryczko K. , Misiewicz J. , Reuter D. , Wieck A.

Acta Physica Polonica A

2011

tom 120

nr 5

849-851

We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.

Interface and Surface Subsignals in Photoreflectance Spectra for GaAs/SI-GaAs Structures

86%

Jezierski K. , Sitarek P. , Misiewicz J. , Panek M. , Ściana B. , Korbutowicz R. , Tłaczała M.

Acta Physica Polonica A

1995

tom 88

nr 4

751-754

Photoreflectance spectra were measured at room temperature for energies in the vicinity of the E_{0} critical point for p-type as well as n-type doped GaAs/SI-GaAs structures. Depending on the doping concentration the existence of two photoreflectance subsignals was observed; the first one arises from the surface space charge region while the second one from the interface region. The decomposition of photoreflectance spectrum into surface and interface subsignals was based on the photoreflectance measurements carried out for different wavelengths of the laser pump beam.

Light-Induced Modification of 3D Photonic Band Structure Detected by Means of Photoreflection

72%

Kapitonov A. , Kachan S. , Ponyavina A. , Gaponenko S. , Bogomolov V. , Prokofiev A. , Sitarek P. , Misiewicz J.

Acta Physica Polonica A

1999

tom 95

nr 3

335-342

Porous synthetic opal possessing a three-dimensional photonic band structure of semimetallic type was impregnated with polycrystalline CdS. The photonic stop band in (111) direction was examined by means of photoreflection technique. Under cw laser excitation of semiconductor inclusions the reflectance of the system changes indicating a modification of photonic band structure. A possible mechanism is discussed. Numerical simulations within the framework of quasicrystalline approximation are given.