Wyniki wyszukiwania - Biblioteka Nauki

Ten serwis zostanie wyłączony 2025-02-11.

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

3 Acta Physica Polonica A

Znaleziono wyników: 4

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique

100%

Kowalski G. , Gronkowski J. , Borowski J. , Hruban A.

nr 2

391-398

New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.

Observation of Magnetic Anisotropy in GaN:Cr Single Crystals

75%

Gosk J. , Boćkowski M. , Kowalski G. , Grzegory I. , Szczytko J. , Twardowski A.

nr 6

1007-1009

Magnetic properties of bulk wurtzite GaN:Cr single crystals were studied with the magnetic field applied parallel and perpendicular to the crystal wurtzite c-axis. Structure of the crystal was examined by the X-ray diffraction method. Strong anisotropy of magnetization at low temperatures (2-10 K) was observed. The experimental data suggest Cr to be in nonspherical d^4 configuration.

Observation of Superconductivity in Highly Cr-Doped GaP Single Crystals

75%

Gosk J. , Strzelecka G. , Kowalski G. , Hruban A. , Kamińska M. , Twardowski A. , Gronkowski J.

tom 110

nr 2

189-193

Studying bulk GaP, highly doped with Cr, and searching for possible ferromagnetic semiconductor in view of spintronic applications, we found superconducting behavior of this material unexpectedly. Magnetization techniques and X-ray diffraction were applied to study these crystals. Magnetization revealed superconducting features up to about 6 K and X-ray studies showed that superconductivity might be related to small size Cr precipitates.

Structural and Electronic Properties of Graphene Oxide and Reduced Graphene Oxide Papers Prepared by High Pressure and High Temperature Treatment

63%

Tokarczyk M. , Kowalski G. , Witowski A. , Koziński R. , Librant K. , Aksienionek M. , Lipińska L. , Ciepielewski P.

nr 5

1190-1194

"Graphene paper" prepared by new proprietary method involving high pressure and high temperature treatment in the reduction process show new possibilities in this area. Different phase content: multilayer and single layer graphene stacks recorded in this study for RGO samples are accompanied by the specific electric and optical parameters. We have found that process temperatures above 900°C play crucial role in structural and other properties. For the process temperature around 2000°C we found the onset of the graphitization in the samples.