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2 Acta Physica Polonica A

2 1997

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Electrical and ESR Studies of GaN Layers Grown by Metal Organic Chemical Vapour Deposition

100%

Suchanek B. , Palczewska M. , Pakuła K. , Baranowski J. , Kamińska M.

nr 5

1001-1004

Electrical transport and ESR studies were performed on the state-of-theart GaN layers grown on sapphire substrate using metal organic chemical vapour deposition technique. For undoped samples electron concentration below 2×10^{17} cm^{-1} and mobility up to 500 cm^{2}/(V s) were achieved whereas hole concentration up to 7×10^{17} cm^{-3} and mobility about 16 cm^{2}/(V s) were obtained for intentionally Mg doped samples and subsequently annealed. Temperature dependence of mobility was discussed. ESR revealed the presence of two resonance absorption lines. One of them with g_{⊥}=1.9487 and g_{∥}=1.9515, commonly observed in n-type GaN was due to shallow donor. The second ESR line was an isotropic one of g=2.0032 and it is discussed.

Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers

86%

Wojdak M. , Baranowski J. M. , Suchanek B. , Pakuła K. , Jun J. , Suski T.

nr 5

1059-1062

In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10^{17} cm^{-3} and mobility 16 cm^{2}/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.