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2 Electron Technology

2 1999

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An effect of PD SOI MOSFET parameters variations on its electrical characteristics

100%

Tomaszewski D. , Jakubowski A. , Dębski T.

tom Vol. 32, No. 1/2

91-95

This work pesents an effect of variations of several and electrical parameters for the DC I-V characteristics of the partially-depleted SOI MOSFETs. The calculations have been done using the physical model of the PD SOI MOSFETs. The calculations show that model characteristics are sensitive to variations of the minority carriers recombination lifetime in the Si film, generation lifetime in the junctions space-charge areas and the film thickness.

Bonding and etch-back techniques for SOI technology

88%

Łozinko J. , Panas A. , Budzyński T. , Grabiec P. , Dębski T.

tom Vol. 32, No. 1/2

162-165

The purpose of this paper is to show results of investigations on bonding and etch-back technoques (BESOI) for applicatios in the fabrication of Silicon-On-Insulator (SOI). Results obtained for high (≥ 1000°C) temperature silicon wafer-to-wafer bond process, where silicon dioxide is used as an intermediate layer, will be presented. Method for thinning of the bonded wafer was performed by preferential etch technoque using p⁺ etch-stop layer.