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Ge diffusion on Si surfaces

100%

Dolbak A. , Olshanetsky B.

Open Physics

2006

tom 4

nr 3

310-317

Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.

Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

100%

Dolbak A. , Olshanetsky B.

Open Physics

2008

tom 6

nr 3

634-637

The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude.

Surface diffusion of Pb on clean Si surfaces

80%

Dolbak A. , Zhachuk R. , Olshanetsky B.

Open Physics

2004

tom 2

nr 2

254-265

Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.