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2 Acta Physica Polonica A

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Magnetization Dynamics of a (Cd,Mn)Te Quantum Well in Pulsed Magnetic Field

100%

Kobak J. , Goryca M. , Kossacki P. , Golnik A. , Karczewski G. , Wojtowicz T. , Gaj J.

Acta Physica Polonica A

2009

tom 116

nr 5

907-908

In this paper we present studies of magnetization relaxation in a (Cd,Mn)Te quantum well containing 3.2% of Mn, after a pulse of magnetic field. The relaxation was found to be very fast, with dominant component faster than 10 ns. Upon application of static magnetic field the relaxation does not slow down, in contrast with the behavior of very diluted quantum wells or bulk material.

MBE Growth and Magnetooptical Properties of (Zn,Co)Te Layers

100%

Papaj M. , Kobak J. , Rousset J. , Janik E. , Golnik A. , Kossacki P. , Pacuski W.

nr 6

1010-1011

We report on epitaxial growth of diluted magnetic semiconductor (Zn,Co)Te. Reflectivity spectra reveal excitonic transition which split under magnetic field due to giant Zeeman effect. Magnetooptical effects can be described using literature data.

MBE Growth of CdTe/ZnTe Quantum Dots with Single Mn Ions

84%

Gietka K. , Kobak J. , Rousset J. , Janik E. , Słupiński T. , Kossacki P. , Golnik A. , Pacuski W.

nr 6

1056-1058

We report MBE growth and properties of samples with self assembled quantum dots with single manganese ions and low density of quantum dots. Manganese concentration was calibrated using magneto-reflectivity measurements and the giant Zeeman effect in (Cd,Mn)Te and (Zn,Mn)Te layers. Successful incorporation of Mn in the CdTe/ZnTe quantum dots was confirmed using micro-photoluminescence measurements: single manganese ion in quantum dot manifests in sixfold splitting of exciton emission lines due to s, p-d exchange interaction.

MBE Growth and Characterization of a III-V Distributed Bragg Reflectors and InAs Quantum Dots

84%

Rousset J. , Słupinski T. , Jakubczyk T. , Kobak J. , Stawicki P. , Gołasa K. , Babinski A. , Nawrocki M. , Pacuski W.

nr 6

984-987

We describe the realization and characterization of a distributed Bragg reflectors and InAs quantum dots grown by molecular beam epitaxy. The distributed Bragg reflectors are based on a stack of eight or twenty pairs of GaAs and AlAs layers with a stopband centered at about E_0=1.24 eV (λ_0=1000 nm). The whole structures exhibit a reflectivity coefficient above 90%. The growth rate was monitored in situ by measurement of the oscillations of the thermal emission intensity. The investigations conducted on the InAs quantum dots grown on GaAs show photoluminescence around E=1.25 eV (λ=990 nm). The combination of these two elements results in the realization of a microcavity containing InAs quantum dots and surrounded by 20 pairs of distributed Bragg reflectors.

Optical Properties of CdTe QDs Formed Using Zn Induced Reorganization

84%

Kobak J. , Pacuski W. , Jakubczyk T. , Kazimierczuk T. , Golnik A. , Frank K. , Rosenauer A. , Kruse C. , Hommel D. , Gaj J.

nr 5

627-629

In this paper we present optical studies of CdTe quantum dots formed using Zn-induced reorganization. The pattern of quantum dot photoluminescence lines is found to be similar to typical results reported for quantum dots grown with other techniques, although the positively charged exciton line is relatively more pronounced. Also the energy spacing between biexciton and exciton lines is found to be larger than in typical results. Zn-induced reorganization results in quantum dots density higher by an order of magnitude than in Te-induced quantum dots.