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1 Opto-Electronics Review

1 2003

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Free-standing non-polar gallium nitride substrates

100%

Maruska H. P. , Hill D. W. , Chou M. C. , Gallagher J. J. , Chai B. H.

Opto-Electronics Review

2003

tom Vol. 11, No. 1

7-17

A review is given of efforts to prepare thick gallium nitride films on lattice-matched γ-LiAlO₂ substrates. Much progress in the design of new high performance nitride device structures is presently impeded by the lack of GaN substrates, leading to large defect concentrations in layers grown on foreign materials. These problems could be alleviated if a true GaN substrate were to become available, allowing homoepitaxial growth. The preparation of 50 mm diameter boules of γ-LiAlO₂ from the melt will be discussed, including wafer preparation. Growth of thick (300-400um)GaN layers on the γ-LiAlO₂ wafers willbe presented. The GaN is deposited by the halide vapour phase epitaxy (HVPE) method. Characteristics of these 50 mm diameter wafers are explained in detail. Much progress has been made, but several problems remain to be overcome.