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InP:Fe Nanodiode conductivity current persistent photoenhamcement decey

100%

Zardas G. E. , Anagnostakis E. A.

TASK Quarterly : scientific bulletin of Academic Computer Centre in Gdansk

2013

tom Vol. 17, No 3-4

139--143

The temporal decay of the persistent photoenhancement of the conductivity current flowing through the active channel of two samples of a typical nanodevice comprising a low resistivity n-type InP:Fe epitaxial layer and a semi-insulating InP:Fe substrate is experimentally investigated at room temperature and interpreted via consideration of the functionality of the diodic interface potential barrier. A mean decay mechanism and its distinct regimes are singled out.

Persistent photoconductivity in a InP:Fe single layer structure at room temperature

70%

Zardas G. E. , Yannakopoulos P. H. , Symeonides C. I. , Csabay O. , Euthymiou P. C.

tom Vol. 23, No. 4

985--988

Measurements of current in the dark and under illumination were carried out at room temperature on samples of semi-insulating (SI) InP:Fe, on which a layer of low resistivity InP:Fe was deposited. A voltage of 25 mV was applied. After the illumination was switched off, a remaining current was observed, for at least one hour, higher than the current before the illumination. This phenomenon is known as persistent photoconductivity (PPC) and, according to the suggested models, is due to the barriers separating electrons and holes and preventing their recombination.