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4 Opto-Electronics Review

4 Norton P.

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Third-generation sensors for night vision

100%

Norton P.

tom Vol. 14, No. 1

1-10

Third generation sensors are under development to enhance capabilities for target detection and identification, threat warning, and 3D imaging. Distinct programs for both cooled HgCdTe and uncooled microbolometer devices are part of this thrust. This paper will describe the technology for HgCdTe two-colour, high-definition imaging sensors and threat warning devices, avalanche photodiode arrays for 3D imaging, and the supporting technology being developed to enhance the readouts that support these devices. Uncooled detector initiatives will also be described to reduce pixel size in conjunction with the production of 480x640 arrays. Finally, efforts are also beginning to move both photon and thermal detectors closer to radiative-limited performance while simultaneously reducing the cooling requirements for photon detectors.

Infrared sensors in spacecraft that monitor planet Earth

100%

Norton P.

Opto-Electronics Review

2008

tom Vol. 16, No. 2

105-117

Infrared sensors provide a backbone for many of the instruments flown by National Aeronautics and Space Administration (NASA) and National Oceanic and Atmospheric Administration (NOAA) that monitor conditions on planet Earth. This paper gives an overview of some of those missions and infrared sensors used in the spacecraft instruments. Basic properties of the sensors are described and the evolution of sensor complexity is presented by example. Future trends pointing towards more sophisticated sensors in the future are discussed.

HgCdTe infrared detectors

100%

Norton P.

Opto-Electronics Review

2002

tom Vol. 10, No. 3

159-174

HgCdTe infrared detectors have been intensively developed over the past forty years since the first synthesis of this compound semiconductor in 1958. Today, HgCdTe is the most widely used infrared detector material. This paper reviews key developments in the crystal growth and device history of this important technology. Projections and challenges for the continued evolution of this technology are summarized

Understanding the NEΔT of tactical infrared focal plane arrays

100%

Norton P.

Opto-Electronics Review

2012

tom Vol. 20, No. 3

275-278

NEΔT is the commonly used figure-of-merit for infrared-imaging systems using focal plane arrays (FPAs). This paper discusses an intuitive approach to understanding what determines this value in the majority of MWIR and LWIR broad-band applications, namely, the available charge storage capacity of the FPA readout. This conclusion is a consequence of the negligible amount of dark current compared to photo-current for modern detector technology.