Wyniki wyszukiwania - Biblioteka Nauki

Nowa wersja platformy, zawierająca wyłącznie zasoby pełnotekstowe, jest już dostępna.
Przejdź na https://bibliotekanauki.pl

Ograniczanie wyników

2 Journal of Power Technologies

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Sortuj według:

Ogranicz wyniki do:

Influence of hydrogen volumetric flow rate on temperature distribution in CVD reactor based on epi-growth of SiC

100%

Skibinski J. , Wejrzanowski T. , Teklinska D. , Kurzydlowski K. J.

tom Vol. 95, nr 2

119--125

In the present paper the quantitative relationship between the heat and mass transfer in the Aixtron VP508 hot wall CVD reactor and the epitaxial growth of silicon carbide is determined. The aim of this study was to estimate optimal process conditions for obtaining monocrystalline silicon carbide epi-layers with the most homogenous thickness. Since there are many parameters influencing reactions on the crystal area, such as temperature, pressure, gas flow and reactor geometry, it is difficult to design an optimal process. Detailed 3D modeling was used to gain insight into the process conditions, as it is problematic to experimentally determine the exact distribution of heat and mass transfer inside the reactor during epitaxial growth. Numerical simulations allow one to understand the process by calculating the heat and mass transfer distribution during the epitaxial growth of silicon carbide. The present approach was applied to enhance the performance of the Aixtron VP508 reactor.

Numerical simulations of epitaxial growth in MOVPE reactor as a tool for aluminum nitride growth optimization

88%

Skibinski J. , Caban P. , Wejrzanowski T. , Grybczuk M. , Kurzydlowski K. J.

tom Vol. 96, nr 2

110--114

The present study concerns numerical simulations and experimental measurements on the influence of inlet gas mass flow rate on the growth rate of aluminum nitride crystals in Metalorganic Vapor Phase Epitaxy reactor model AIX-200/4RF-S. The aim of this study was to design the optimal process conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions relating to crystal growth such as temperature, pressure, gas composition and reactor geometry, it is difficult to design an optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. Since it is impossible to experimentally determine the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to gain insight into the process conditions. Numerical simulations increase the understanding of the epitaxial process by calculating heat and mass transfer distribution during the growth of aluminum nitride crystals. Including chemical reactions in the numerical model enables the growth rate of the substrate to be calculated. The present approach has been applied to optimize homogeneity of AlN film thickness and its growth rate.